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Multiple-input-multiple-output (MIMO) systems of current LTE releases are capable of adaptation in the azimuth only. Recently, the trend is to enhance system performance by exploiting the channel's degrees of freedom in the elevation, which…
3-dimensional Multiple-Input Multiple-Output (3D MIMO) systems have received great interest recently because of the spatial diversity advantage and capability for full-dimensional beamforming, making them promising candidates for practical…
The sheet current model underlying the software 3D-MLSI package for calculation of inductances of multilayer superconducting circuits, has been further elaborated. The developed approach permits to overcome serious limitations on the shape…
The increasing density of transistors in Integrated Circuits (ICs) has enabled the development of highly integrated Systems-on-Chip (SoCs) and, more recently, Multiprocessor Systems-on-Chip (MPSoCs). To address scalability challenges in…
Microwave sensors integrated with microfluidic platforms can provide the size and permittivity of single cells and microparticles. Amongst the microwave sensor topologies, the planar arrangement of electrodes is a popular choice owing to…
Strain engineering has played a key role in modern silicon electronics, having been introduced as a mobility booster in the 1990s and commercialized in the early 2000s. Achieving similar advances with two-dimensional (2D) semiconductors in…
Three-dimensional integrated circuits promise power, performance, and footprint gains compared to their 2D counterparts, thanks to drastic reductions in the interconnects' length through their smaller form factor. We can leverage the…
3D integration technologies are seeing widespread adoption in the semiconductor industry to offset the limitations and slowdown of two-dimensional scaling. High-density 3D integration techniques such as face-to-face wafer bonding with…
We study layered systems and heterostructures of s-wave superconductors by means of a suitable generalization of Dynamical Mean-Field Theory. In order to reduce the computational effort, we consider an embedding scheme in which a relatively…
The Last Level Cache (LLC) is the processor's critical bridge between on-chip and off-chip memory levels - optimized for high density, high bandwidth, and low operation energy. To date, high-density (HD) SRAM has been the conventional…
Silicon photonics, compatible with large-scale silicon manufacturing, is a disruptive photonic platform that has indicated significant implications in industry and research areas (e.g., quantum, neuromorphic computing, LiDAR). Cutting-edge…
Through-silicon vias (TSVs) enable dense vertical interconnects in 3D-IC and chiplet systems, but their metal-oxide-silicon structure introduces significant parasitic coupling paths that can degrade the spectral purity of sensitive RF…
Massive multiple-input multiple-output (MIMO) systems achieve high sum spectral efficiency by offering an order of magnitude increase in multiplexing gains. In time division duplexing systems, however, the reuse of uplink training pilots…
We demonstrate for the first time flat-top interleavers based on cascaded Mach-Zehnder interferometers (MZIs) which use only single multimode interferometers (MMIs) as power splitters. Our previous designs were based on 4-stage cascades of…
Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current computing paradigms based on traditional von-Neumann architecture. In this regard, interest in…
The deep trapping gate pixel device was described recently as an alternative to CMOS 3T pixel. The feasibilty of this device was studied with technological and transport simulations used in classical electron devices and process design. A…
In this paper, we discuss the design and whole-cavity simulation of a Multi-Beam Inductive Output Tube (MBIOT) that uses a 3rd harmonic component to the drive voltage on the grid. High-efficiency inductive output tubes (IOTs) are typically…
Monolayer Molybdenum Disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectronic applications. In this letter, we synthesize monolayer MoS2…
The demand for advanced photonics technology is increasing rapidly, fueled by the necessity for high-performance and cost-effective optical information processing systems extending into the quantum domain. Silicon, benefiting from its…
The integration of high-k dielectrics with two-dimensional (2D) semiconductors is a critical step towards high-performance nanoelectronics, which however remains challenging due to high density of interface states and the damage to the…