Related papers: Plasmonic-enhanced bright single spin defects in s…
In this work, we present a method for targeted, maskless, and scalable fabrication of single silicon vacancy (VSi) defect arrays in silicon carbide (SiC) using focused ion beam. The resolution of implanted VSi defects is limited to a few…
Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum…
The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab-initio…
Silicon carbide is a promising platform for single photon sources, quantum bits (qubits) and nanoscale sensors based on individual color centers. Towards this goal, we develop a scalable array of nanopillars incorporating single silicon…
Color centers in host semiconductors are prime candidates for spin-photon interfaces that would enable numerous quantum applications. The discovery of an optimal spin-photon interface in silicon would move quantum information technologies…
Defects in wide-bandgap semiconductors provide a pathway for applications in quantum information and sensing in solid state materials. The silicon vacancy in silicon carbide has recently emerged as a new candidate for optical control of…
Neutrally charged divacancies in silicon carbide (SiC) are paramagnetic color centers whose long coherence times and near-telecom operating wavelengths make them promising for scalable quantum communication technologies compatible with…
Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology due to its optical transitions in the telecom wavelength range. However, several key characteristics of this defect family including their…
Silicon carbide (SiC) is an important semiconductor material for fabricating power electronic devices that exhibit higher switch frequency, lower energy loss and substantial reduction both in size and weight in comparison with its Si-based…
Quantum communication promises unprecedented capabilities enabled by the transmission of quantum states of light. However, current implementations face severe distance limitations due to photon loss. Silicon carbide (SiC) defects have…
Optically-active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain and temperature. Current sensing techniques…
Silicon carbide has emerged as a promising material platform for quantum photonics and nonlinear optics. These properties make the development of integrated photonic components in high-quality silicon carbide a critical aspect for the…
We report the first observation of stable single photon sources in silicon carbide (SiC). These sources are extremely bright and operate at room temperature demonstrating that SiC is a viable material in which to realize various quantum…
We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is varied over several orders of magnitude. We…
Laboratory measurements of unpolarized and polarized absorption spectra of various samples and crystal stuctures of silicon carbide (SiC) are presented from 1200--35,000 cm$^{-1}$ ($\lambda \sim$ 8--0.28 $\mu$m) and used to improve the…
Quantum memories based on emitters with optically addressable spins rely on efficient photonic interfaces, often implemented as nanophotonic cavities with ideally narrow spectral linewidths and small mode volumes. However, these approaches…
Electronic defects in semiconductors form the basis for many emerging quantum technologies. Understanding defect spin and charge dynamics in solid state platforms is crucial to developing these building blocks, but many defect centers are…
Single photon sources are an integral part of various quantum technologies, and solid state quantum emitters at room temperature appear as a promising implementation. We couple the fluorescence of individual silicon vacancy centers in…
Colour centres with long-lived spins are established platforms for quantum sensing and quantum information applications. Colour centres exist in different charge states, each of them with distinct optical and spin properties. Application to…
The detection of electron spins associated with single defects in solids is a critical operation for a range of quantum information and measurement applications currently under development. To date, it has only been accomplished for two…