Related papers: Plasmonic-enhanced bright single spin defects in s…
Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. Here, we release this stringent constraint by demonstrating…
Color centers in silicon carbide are emerging candidates for distributed spin-based quantum applications due to the scalability of host materials and the demonstration of integration into nanophotonic resonators. Recently, silicon vacancy…
Optically interfaced solid-state defects are promising candidates for quantum communication technologies. The ideal defect system would feature bright telecom emission, long-lived spin states, and a scalable material platform,…
Quantum defects in solids have emerged as a transformative platform for advancing quantum technologies. A key requirement for these applications is achieving high-fidelity single-spin readout, particularly at room temperature for quantum…
Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising the photonic efficiency via integration into nanophotonic…
The unique quantum properties of the nitrogen-vacancy (NV) center in diamond have motivated efforts to find defects with similar properties in silicon carbide (SiC), which can extend the functionality of such systems not available to the…
We detail several scientific and engineering innovations which enable the controlled spalling of 10 - 50 micron thick films of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's properties, including high thermal…
Quantum emitters hosted in crystalline lattices are highly attractive candidates for quantum information processing, secure networks and nanosensing. For many of these applications it is necessary to have control over single emitters with…
The silicon monovacancy in 4H-SiC is a promising candidate for solid-state quantum information processing. We perform high-resolution optical spectroscopy on single V2 defects at cryogenic temperatures. We find favorable low temperature…
Emitters in high refractive index materials like 4H-SiC suffer from reduced detection of photons because of losses caused by total internal reflection. Thus, integration into efficient nanophotonic structures which couple the emission of…
Solid-state spin defects are promising quantum sensors for a large variety of sensing targets. Some of these defects couple appreciably to strain in the host material. We propose to use this strain coupling for mechanically-mediated…
Superconductor based quantum computing has the major drawback of working temperatures which require liquid helium for cooling. A promising approach to overcome this obstacle for quantum technologies is based on deep level defects in…
Silicon Carbide (SiC) demonstrates significant potential for high-energy particle detection in complex radiation environments due to its exceptional radiation resistance, excellent environmental adaptability, and fast response time.…
Paramagnetic point defects in solids may exhibit a rich set of interesting and not yet fully resolved physics. In particular, character of wavefunctions and electron-phonon coupling in these defects may highly influence their interaction…
Cubic silicon carbide is an excellent platform for integration of defect qubits into established wafer scale device architectures for quantum information and sensing applications, where divacancy qubit, that is similar to the negatively…
The recent progress in chip-scale integrated photonics has stimulated the rapid development of material platforms with desired optical properties. Among the different material platforms that are currently investigated, the third-generation…
The negatively-charged silicon vacancy center ($\rm V_{Si}^-$) in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing, communication, and computing. Yet, limited information currently available…
The low efficiency of porous silicon (p-Si) luminescence hinders the development of silicon-based optoelectronic devices. The increase in p-Si emission using near-field enhancement, owing to the incorporation of gold nanoparticles (AuNPs)…
Spins bound to point defects are increasingly viewed as an important resource for solid-state implementations of quantum information technologies. In particular, there is a growing interest in the identification of new classes of defect…
Quantum technologies would benefit from the development of high performance quantum defects acting as single-photon emitters or spin-photon interface. Finding such a quantum defect in silicon is especially appealing in view of its favorable…