Related papers: Plasmonic-enhanced bright single spin defects in s…
An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout - a deterministic measurement of the quantum state. Here, we demonstrate single-shot readout of single defects in SiC via spin-to-charge…
Spin-active colour centres in 4H silicon carbide are promising candidates as building blocks for quantum information applications. To increase the photon count rate of the emitters at low temperatures, the colour centres must be integrated…
Transition metal (TM) defects in silicon carbide have favorable spin coherence properties and are suitable as quantum memory for quantum communication. To characterize TM defects as quantum spin-photon interfaces, we model defects that have…
The neutral divacancy and the negatively charged nitrogen-vacancy defects in 4H-silicon carbide (SiC) are two of the most prominent candidates for functioning as room-temperature quantum bits (qubits) with telecommunication-wavelength…
Colour centres hosted in solid-state materials such as silicon carbide and diamond are promising candidates for integration into chip-scale quantum systems. Specifically, the incorporation of these colour centres within photonic integrated…
Optically addressable spin defects in silicon carbide, including the neutral divacancy (VV$^0$) and the negative nitrogen-vacancy (NV$^-$), are among leading building blocks of solid-state quantum technologies. Integrating these defects…
Spin impurities in diamond have emerged as a promising building block in a wide range of solid-state-based quantum technologies. The negatively charged silicon-vacancy centre combines the advantages of its high-quality photonic properties…
The negatively-charged silicon-vacancy (SiV$^-$) color center in diamond has recently emerged as a promising system for quantum photonics. Its symmetry-protected optical transitions enable creation of indistinguishable emitter arrays and…
Different types of concave plasmonic nanoresonators have been optimized to achieve superradiantly enhanced emission of SiV color centers in diamond. Comparative study has been performed to consider advantages of different N number of SiV…
Divacancy spins in silicon carbide implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numerous open questions about the physics of divacancy point…
An outstanding challenge for color center-based quantum information processing technologies is the integration of optically-coherent emitters into scalable thin-film photonics. Here, we report on the integration of near-transform-limited…
We investigate the optical properties of polycrystalline diamond membranes containing silicon-vacancy (SiV) color centers in combination with other nano-analytical techniques. We analyze the correlation between the Raman signal, the SiV…
Deep defects in silicon carbide (SiC) possess atom-like electronic, spin and optical properties, making them ideal for quantum-computing and -sensing applications. In these applications, deep defects are often placed within fabricated…
Integrated photonic platforms have proliferated in recent years, each demonstrating its own unique strengths and shortcomings. However, given the processing incompatibilities of different platforms, a formidable challenge in the field of…
Integrated quantum photonics holds significant promise for scalable photonic quantum information processing, quantum repeaters, and quantum networks, but its development is hindered by the mismatch between materials hosting high-quality…
We introduce a modular approach for efficiently interfacing photonic integrated circuits with deep-sub-wavelength hybrid plasmonic functionality. We demonstrate that an off-the-shelf silicon-on-insulator waveguide can be post-processed into…
Integrating solid-state spin defects into classical electronic devices can enable new opportunities for quantum information processing that benefit from existing semiconductor technology. We show, through bias control of an isotopically…
We present a novel approach for achieving tightly concentrated optical field by a hybrid photonic-plasmonic device in an integrated platform, which is a triangle-shaped metal taper mounted on top of a dielectric waveguide. This device,…
We demonstrate that the spin of optically addressable point defects can be coherently driven with AC electric fields. Based on magnetic-dipole forbidden spin transitions, this scheme enables spatially confined spin control, the imaging of…
By applying our methodology, we propose a defect in 4H-SiC which combines a Si vacancy and a C atom substituted with S (VSiSC) to have a spin-triplet ground state with the spin qubit functionality. Our calculations confirm that all…