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Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have…
Devices based on photonic integrated circuits play a crucial role in the development of low-cost, high-performance, industry-scale manufacturable sensors. We report the design, fabrication, and application of a silicon nitride…
Hybrid SiN-QD microlasers coupled to a passive SiN output waveguide with 7{\mu}m diameter and record low threshold density of 27 {\mu}J cm-2 are demonstrated. A new design and unique processing scheme starting from SiN/QD/SiN stacks offer…
Textured silicon surface structures, in particular black silicon (b-Si), open up possibilities for Si-based solar cells and photodetectors to be extremely thin and highly sensitive owing to perfect light-trapping and anti-reflection…
Two-dimensional materials (2DMs) meet the demand of broadband and low-cost photodetection on silicon for many applications. Currently, it is still very challenging to realize excellent silicon-2DM PDs. Here we demonstrate…
Semiconducting 2D materials, such as molybdenum disulfide (MoS2) and other members of the transition metal dichalcogenide family, have emerged as promising materials for applications in high performance nanoelectronics that exhibit…
Efficiently distinguishing photon numbers is a crucial yet challenging technology for various quantum information and quantum metrology applications. While superconducting transition edge sensors offer good photon-number-resolving (PNR)…
Two-dimensional materials offering ultrafast photoresponse suffer from low intrinsic absorbance, especially in the mid-infrared wavelength range. Challenges in 2d material doping further complicate the creation of light-sensitive $p-n$…
SuperSpec is a novel on-chip spectrometer we are developing for multi-object, moderate resolution (R = 100 - 500), large bandwidth (~1.65:1) submillimeter and millimeter survey spectroscopy of high-redshift galaxies. The spectrometer…
Metamaterials and metasurfaces operating in the visible and near-infrared (NIR) offer a promising route towards next-generation photodetectors and devices for solar energy harvesting. While numerous metamaterials and metasurfaces using…
Semiconductor photonic devices operating in the midwave infrared (mid-IR, which we roughly define here as wavelengths spanning 3 to 14 microns) uniquely address a wide range of current practical needs. These include chemical sensing,…
We report the photoresponse of niobium diselenide (NbSe$_2$), a transition metal dichalcogenide (TMD) which exhibits superconducting properties down to a single layer. Devices are built by using micro-mechanically cleaved 2 to 10 layers and…
A few-micron thick structure that shows nearly 100% resonant polarized absorptance at a predefined midinfrared wavelength is designed and simulated. Like resonant-cavity enhanced photodetector structure, it contains a thin absorber enclosed…
We present the model of an ultrasensitive mid-infrared (mid-IR) photodetector operating in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) domains consisting of a hybrid heterostructure made of nanopatterned graphene…
Optical isolators and circulators are indispensable for photonic integrated circuits (PICs). Despite of significant progress in silicon-on-insulator (SOI) platforms, integrated optical isolators and circulators have been rarely reported on…
High confinement, integrated silicon nitride (SiN) waveguides have recently emerged as attractive platform for on-chip nonlinear optical devices. The fabrication of high-Q SiN microresonators with anomalous group velocity dispersion (GVD)…
In recent years, the data traffic has grown exponentially and the forecasts indicate a huge market that could be addressed by communication infrastructure and service providers. However, the processing capacity, space, and energy…
We demonstrate photon counting at 1550 nm wavelength using microwave kinetic inductance detectors (MKIDs) made from TiN/Ti/TiN trilayer films with superconducting transition temperature Tc ~ 1.4 K. The detectors have a lumped-element design…
We present the vertically illuminated Si compatible mid-infrared photodetectors based on graphene that forms negative-index metamaterial. The coupling into a 2D layer at the angles near normal to the surface is negligible without the help…
Photonic integrated circuits utilize various waveguide materials, each excelling in specific metrics like efficient light emission, low propagation loss, high electro-optic efficiency, and potential for mass production. Inherent…