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Intensive efforts have been devoted to exploit novel optoelectronic devices based on two-dimensional (2D) transition-metal dichalcogenides (TMDCs) owing to their strong light-matter interaction and distinctive material properties. In…
Photodetector based on two-dimensional (2D) materials is an ongoing quest in optoelectronics. These 2D photodetectors are generally efficient at low illuminating power but suffer severe recombination processes at high power, which results…
Recent work on mid-infrared (MIR) detection through the process of non-degenerate two-photon absorption (NTA) in semiconducting materials has shown that wide-field MIR imaging can be achieved with standard Si cameras. While this approach…
We report on the fastest silicon waveguide integrated photodetectors with a bandwidth larger than 128 GHz for ultrafast optical communication. The photodetectors are based on CVD graphene that is compatible to wafer scale production…
Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top…
In the next decades millimeter and sub-mm astronomy requires large format imaging arrays and broad-band spectrometers to complement the high spatial and spectral resolution of the Atacama Large Millimeter/sub-millimeter Array. The desired…
Achieving high quantum efficiency (QE) with low dark count is essential for highly sensitive photodetectors (PDs), including single photon avalanche detectors (SPADs). However, high QE requires a thicker absorber region, which leads to high…
Photonic integrated circuit devices can be used as refractometric opto-fluidic sensors to detect the presence of analytes in solution at low concentrations. In this work, we investigate the refractive index sensitivity of silicon nitride…
The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for realizing high performance opto-electronic devices such as photodetectors and light sources1-3.…
Enhancement of radiative coupling efficiency between out-of-plane excitonic emitters in an indium selenide (InSe) film and an integrated waveguide formed by silicon (Si) Mie-resonant nanodisks is experimentally studied. Photoluminescence…
The electronic properties of graphene are unique and are attracting increased attention to this novel 2-dimensional system. Its photonic properties are not less impressive. For example, this single atomic layer absorbs through direct…
Photodetectors at telecommunications-band with high efficiency and high speed are becoming increasingly important as the booming of big data, 5G, internet of things, cloud computing, artificial intelligence and relevent applications.…
The challenge of next generation datacom and telecom communication is to increase the available bandwidth while reducing the size, cost and power consumption of photonic integrated circuits. Silicon (Si) photonics has emerged as a viable…
A true monolithic infrared photonics platform is within reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. Herein, we investigate the structural and optoelectronic properties of a 1.5 {\mu}m-thick…
Sensitive and cost-effective Group-IV short-wave infrared (SWIR) photodetectors (PDs), compatible with complementary metal-oxide semiconductor (CMOS) processes, are crucial for various emerging applications. Here, we developed a black GeSn…
Two-dimensional Indium Selenide (InSe) has attracted extensive attention recently due to its record-high charge carrier mobility and photoresponsivity in the fields of electronics and optoelectronics. Nevertheless, the mechanical properties…
Recent development on Ge$_{1-x}$Sn$_x$ nanowires with high Sn content, beyond its solid solubility limit, make them attractive for all group-IV Si-integrated infrared photonics at nanoscale. Herein, we report a chemical vapour…
InGaAs/InP single-photon detectors (SPDs) are widely used for near-infrared photon counting in practical applications. Photon detection efficiency (PDE) is one of the most important parameters for SPD characterization, and therefore…
Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence,…
The integrated photonics CMOS-compatible silicon nitride (SiN) platform is praised for its low propagation loss, but is limited by its lack of active functionalities such as a strong Pockels coefficient and intrinsic \c{hi}(2) nonlinearity.…