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We present an alternative approach to the fabrication of highly efficient superconducting nanowire single-photon detectors (SNSPDs) based on tungsten silicide. Using well-established technologies for the deposition of dielectric mirrors and…
State-of the-art infrared photodetectors operating in the mid- and long-wavelength infrared (MWIR and LWIR) are largely dominated by cryogenically cooled quantum sensors when the target is the highest sensitivity and detection speeds.…
This work presents a novel Gallium nitride (GaN) high-electron-mobility transistor (HEMT) based ultraviolet photodetector architecture integrating advanced material and structural design strategies to enhance detection performance and…
Millimetre-wave observations represent an important tool for Cosmology studies. The Line Intensity Mapping (LIM) technique has been proposed to map in three dimensions the specific intensity due to line (e.g. [CII], CO) emission, for…
Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic…
Expanding far beyond traditional applications in optical interconnects at telecommunications wavelengths, the silicon nanophotonic integrated circuit platform has recently proven its merits for working with mid-infrared (mid-IR) optical…
Integrated quantum photonics requires compact, efficient, and low-power phase modulators. While silicon nitride (SiN) is a promising platform, existing modulators suffer from high power consumption, thermal crosstalk, or high driving…
We fabricated and characterised nanowire superconducting single-photon detectors (SSPDs) made of 4 nm thick amorphous Mo$_x$Si$_{1-x}$ films. At 1.7 K the best devices exhibit a detection efficiency up to 18% at 1.2 um wavelength of…
Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effects are overcome and thermal effects are suppressed, which is highly beneficial for increasing the dynamic range of various microwave photonic…
Scandium-doped aluminum nitride has recently emerged as a promising material for quantum photonic integrated circuits (PICs) due to its unique combination of strong second-order nonlinearity, ferroelectricity, piezoelectricity, and…
Micron scale silicon nitride (SiN_x) microdisk optical resonators are demonstrated with Q = 3.6 x 10^6 and an effective mode volume of 15 (\lambda / n)^3 at near visible wavelengths. A hydrofluoric acid wet etch provides sensitive tuning of…
Integrated photonic platforms have proliferated in recent years, each demonstrating its own unique strengths and shortcomings. However, given the processing incompatibilities of different platforms, a formidable challenge in the field of…
A critical challenge for the integration of the optoelectronics is that photodetectors have relatively poor sensitivities at the nanometer scale. It is generally believed that a large electrodes spacing in photodetectors is required to…
We have synthesized high-quality, micrometer-sized, single-crystal GeSe nanosheets using vapor transport and deposition techniques. Photoresponse is investigated based on mechanically exfoliated GeSe nanosheet combined with Au contacts…
Silicon photonics has recently been proposed for a diverse set of applications at mid-infrared wavelengths, the implementation of which require on-chip photodetectors. In planar geometries, dopant-based extrinsic photoconductors have long…
Heterogeneous and monolithic integration of the versatile low loss silicon nitride platform with low temperature materials such as silicon electronics and photonics, III-V compound semiconductors, lithium niobate, organics, and glasses, has…
Reconfigurable quantum photonic processors are an essential technology for photonic quantum computing. Although most large-scale reconfigurable quantum photonic processors were demonstrated at the telecommunications C band around 1550 nm,…
Coherent light sources in silicon photonics are the long-sought holy grail because silicon-based materials have indirect bandgap. Traditional strategies for realizing such sources, e.g., heterogeneous photonic integration, strain…
We present superconducting nanowire single-photon detectors (SNSPDs) based on few-layer NbSe$_2$ fully encapsulated with hexagonal boron nitride (hBN), demonstrating single-photon sensitivity. Our fabrication process preserves the…
On-chip integrated light sources are essential for photonic integrated circuits, requiring waveguides to interface various components, from light sources to detectors. Two-dimensional (2D) transition metal dichalcogenide (TMD)…