CMOS compatible high-performance nanolasing based on perovskite-SiN hybrid integration
Abstract
Coherent light sources in silicon photonics are the long-sought holy grail because silicon-based materials have indirect bandgap. Traditional strategies for realizing such sources, e.g., heterogeneous photonic integration, strain engineering and nonlinear process, are technologically demanding. Here, we demonstrate a hybrid lasing device composing of perovskite nanocrystals and silicon nitride nanobeam cavity. We fabricate SiN photonic crystal naonobeam cavities on a solid substrate with significantly improved thermal and mechanical stabilities compared to conventional suspended ones. In addition, adding a PMMA-encapsulation layer on top of the SiN can significantly boost the Q-factor of the cavity mode. By dispersing perovskite nanocrystals as emitters in the PMMA layer, we obtained high-performance coherent emissions in terms of lasing threshold, linewidth and mode volumes. Our work offers a compelling way of creating solution-processed active integrated photonic devices based on the mature platform of silicon photonics for applications in optical information science and photonic quantum technology.
Cite
@article{arxiv.2003.13546,
title = {CMOS compatible high-performance nanolasing based on perovskite-SiN hybrid integration},
author = {Z. He and B. Chen and Y. Hua and Z. Liu and Y. Wei and S. Liu and A. Hu and X. Shen and Y. Zhang and Y. Gao and J. Liu},
journal= {arXiv preprint arXiv:2003.13546},
year = {2024}
}