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Magnetic insulators are a key resource for next-generation spintronic and topological devices. The family of layered metal halides promises ultrathin insulating multiferroics, spin liquids, and ferromagnets, but new characterization methods…
Data are presented on mutual and self-inductance of various inductors used in multilayered superconductor integrated circuits: microstrips and striplines with widths of signal traces from 250 nm to a few micrometers, located on the same…
Epitaxially integrated III-V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit performance and reliability even in defect tolerant InAs quantum…
In a recent Letter, Kravchenko et al. [cond-mat/9608101] have provided evidence for a metal-insulator transition (MIT) in a two-dimensional electron system (2DES) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs). The…
High quality electrical contact to semiconducting transition metal dichalcogenides (TMDCs) such as $MoS_2$ is key to unlocking their unique electronic and optoelectronic properties for fundamental research and device applications. Despite…
The demand for the three-dimensional (3D) integration of electronic components is on a steady rise. The through-silicon-via (TSV) technique emerges as the only viable method for integrating single-crystalline device components in a 3D…
We study the electro-physical properties of the Fe/MgO/Fe magnetic tunnel junctions (MTJ). Sample structures are fabricated on top of glass-ceramic substrates by e-beam evaporation in a relatively low vacuum (~10^-4 Torr). The influence of…
Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In…
Ionic liquid (IL) gating has emerged as a powerful tool to control the structural, electronic, optical, and magnetic properties of materials by driving ion motion at solid interfaces. In magneto-ionic systems, electric fields are used to…
The mid-infrared (MIR) spectral range is of immense use for civilian and military applications. The large number of vibrational absorption bands in this range can be used for gas sensing, process control and spectroscopy. In addition, there…
Reliability has become an increasing concern in modern computing. Integrated circuits (ICs) are the backbone of modern computing devices across industries, including artificial intelligence (AI), consumer electronics, healthcare,…
Applications such as augmented and virtual reality (AR/VR), optical atomic clocks, and quantum computing require photonic integration of (near-)visible laser sources to enable commercialization at scale. The heterogeneous integration of…
The electronic conduction of a novel, three-terminal molecular architecture, analogous to a heterojunction bipolar transistor is studied. In this architecture, two diode arms consisting of donor-acceptor molecular wires fuse through a ring,…
Interfacial charge transfer (ICT) provides a powerful route to engineer electronic phases in correlated oxide heterostructures, yet predictive design principles remain elusive. Here, we systematically investigate superlattices composed of…
We present a novel ion trap fabrication method enabling the realization of multilayer ion traps scalable to an in principle arbitrary number of metal-dielectric levels. We benchmark our method by fabricating a multilayer ion trap with…
In order to explore the origin of the Metal-Insulator (M-I) transition, the precise crystal structures of the hole-doped Mott insulator system, Y1-XCaXTiO3 (x=0.37, 0.39 and 0.41), are studied for the temperature range between 20K and 300K…
The maximum output power of GaN-based high-electron mobility transistors is limited by high channel temperature induced by localized self-heating which degrades device performance and reliability. With generated heat fluxes within these…
We introduce an ion trap platform based on a 3D-printed micro-junction array, designed to implement quantum charge-coupled device (QCCD) architectures for large-scale quantum information processing (QIP). The integration of…
Accelerated muon beams have been considered for next-generation studies of high-energy lepton-antilepton collisions and neutrino oscillations. However, high-brightness muon beams have not yet been produced. The main challenge for muon…
Bimetal transition iodides in two-dimensional scale provide an interesting idea to combine a set of single-transition-metal ferromagnetic semiconductors together. Motivated by structural engineering on bilayer CrI$_3$ to tune its magnetism…