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High Curie Temperature Ferromagnetic Semiconductor: Bimetal Transition Iodide V$_2$Cr$_2$I$_9$

Materials Science 2020-12-10 v2 Applied Physics

Abstract

Bimetal transition iodides in two-dimensional scale provide an interesting idea to combine a set of single-transition-metal ferromagnetic semiconductors together. Motivated by structural engineering on bilayer CrI3_3 to tune its magnetism and works that realize ideal properties by stacking van der Waals transitional metal dichalcogenides in a certain order. Here we stack monolayer VI3_3 onto monolayer CrI3_3 with a middle-layer I atoms discarded to construct monolayer V2_2Cr2_2I9_9. Based on this crystal model, the stable and metastable phases are determined among 7 possible phases by first-principles calculations. It is illustrated that both the two phases have Curie temperature \sim 6 (4) times higher than monolayer CrI3_3 and VI3_3. The reason can be partly attributed to their large magnetic anisotropy energy (the maximum value reaches 412.9 μ\mueV/atom). More importantly, the Curie temperature shows an electric field and strain dependent character and can even surpass room temperature under a moderate strain range. At last, we believe that the bimetal transition iodide V2_2Cr2_2I9_9 monolayer would support potential opportunities for spintronic devices.

Keywords

Cite

@article{arxiv.2012.04270,
  title  = {High Curie Temperature Ferromagnetic Semiconductor: Bimetal Transition Iodide V$_2$Cr$_2$I$_9$},
  author = {Yulu Ren and Qiaoqiao Li and Wenhui Wan and Yong Liu and Yanfeng Ge},
  journal= {arXiv preprint arXiv:2012.04270},
  year   = {2020}
}

Comments

7 pages and 6 figures