Two-dimensional (2D) multiferroics have been casted great attention owing to their promising prospects for miniaturized electronic and memory devices.Here, we proposed a highly stable 2D multiferroic, VOF monolayer, which is an intrinsic ferromagnetic half semiconductor with large spin polarization ~2 μB/V atom and a significant uniaxial magnetic anisotropy along a-axis (410 μeV/V atom). Meanwhile, it shows excellent ferroelectricity with a large spontaneous polarization 32.7 μC/cm2 and a moderate energy barrier (~43 meV/atom) between two ferroelectric states, which can be ascribed to the Jahn-Teller distortion.Moreover, VOF monolayer harbors an ultra-large negative Poisson's ratio in the in-plane direction (~-0.34). The Curie temperature evaluated from the Monte Carlo simulations based on the Ising model is about 215 K, which can be enhanced room temperature under -4% compressive biaxial strain.The combination of ferromagnetism and ferroelectricity in the VOF monolayer could provide a promising platform for future study of multiferroic effects and next-generation multifunctional nanoelectronic device applications.
@article{arxiv.2105.14765,
title = {Two-dimensional Ferroelectric Ferromagnetic Half Semiconductor in VOF monolayer},
author = {Shaowen Xu and Fanhao Jia and Guodong Zhao and Wei Wu and Wei Ren},
journal= {arXiv preprint arXiv:2105.14765},
year = {2021}
}