Nowadays, designing and searching for materials with multiple functional characteristics are the key to achieving high-performance electronic devices. Among many candidates, two-dimensional multiferroic materials have great potential to be applied in highly-integrated magnetoelectric devices, such as high-density non-volatile memories. Here, we predict a two-dimensional material VOF2 monolayer to possess intrinsic ferroelectric and ferromagnetic properties. The VOF2 monolayer own the largest in-plane ferroelectric polarization (332 pC/m) in the family of VOX2 (X: halogen) oxyhalides. Different from other VOX2 monolayers whose magnetic ground states are antiferromagnetic or noncollinear spiral textures, the VOF2 monolayer owns a robust ferromagnetic ground state, which is rare but highly desirable. Our theoretical prediction provides a good candidate and starting point for the further pursuit of more two-dimensional multiferroic materials with high-performance magnetoelectricity.
@article{arxiv.2010.00234,
title = {Prediction of two-dimensional ferromagnetic ferroelectric VOF$_2$ monolayer},
author = {Hai-Peng You and Ning Ding and Jun Chen and Shuai Dong},
journal= {arXiv preprint arXiv:2010.00234},
year = {2020}
}