Related papers: FeFET-based MirrorBit cell for High-density NVM st…
The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…
Symbol decoding in multiple-input multiple-output (MIMO) wireless communication systems requires the deployment of fast, energy-efficient computing hardware deployable at the edge. The brute-force, exact maximum likelihood (ML) decoder,…
Long-range ferroelectric crystalline order usually fades away as the spatial dimension decreases, hence there are few two-dimensional (2D) ferroelectrics and far fewer one-dimensional (1D) ferroelectrics. Due to the depolarization field,…
In this work, we explore the impact of spatially controlled Zr and Al heterogeneous co-doping in HfO$_2$ thin films tailored for metal-ferroelectric-insulator-semiconductor (MFIS) gate stacks of ferroelectric field effect transistors…
Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS$_2$ transistors. The photomemory is based on a photodoping effect - a controlled way of…
Charge-trap memory with high-\k dielectric materials is considered to be a promising candidate for next-generation memory devices. Ultrathin layered two-dimensional (2D) materials like graphene and MoS2 have been receiving much attention…
Computationally hard combinatorial optimization problems are pervasive in science and engineering, yet their NP-hard nature renders them increasingly inefficient to solve on conventional von Neumann architectures as problem size grows.…
Designing nonvolatile multi-level resistive devices is the necessity of time to go beyond traditional one-bit storage systems, thus enhancing the storage density. Here, we explore the electronic phase competition scenario to design…
Although ferroelectric systems inherently exhibit binary switching behavior, recent advances in analog memory device have spurred growing interest in achieving continuous memory states. In this work, we demonstrate ferroelectric amplitude…
Heterostructures based on two dimensional (2D) materials offer the possibility to achieve synergistic functionalities which otherwise remain secluded by their individual counterparts. Herein ferroelectric polarization switching in…
Graphene field-effect transistors (GFETs) are among the most promising platforms for ultrasensitive chemical and biological sensing due to their high carrier mobility, large surface area, and low intrinsic noise. However, conventional…
We propose a modified spin-field-effect transistor fabricated in a two dimensional electron gas (2DEG) formed at the surface of multiferroic oxides with a transverse helical magnetic order. The topology of the oxide local magnetic moments…
High-coherence qubits, which can store and manipulate quantum states for long times with low error rates, are necessary building blocks for quantum computers. Here we propose a driven superconducting erasure qubit, the Floquet fluxonium…
Charge or spin-qubits can be realized by using gate-defined quantum dots (QDs) in semiconductors in a similar fashion to the processes used in CMOS for conventional field-effect transistors or more recent fin FET technology. However, to…
Content addressable memory (CAM) is widely used in associative search tasks for its highly parallel pattern matching capability. To accommodate the increasingly complex and data-intensive pattern matching tasks, it is critical to keep…
HfO2-based ferroelectric films have attracted considerable attention as their nanoscale ferroelectricity and compatibility with cmos technology, fulfilling demands of emerging memory technologies. However, as films scale down,…
Two-dimensional (2D) semiconductors have been suggested both for ultimately-scaled field-effect transistors (FETs) and More-than-Moore nanoelectronics. However, these targets can not be reached without accompanying gate insulators which are…
In this work, we report a novel design, one-transistor-one-inverter (1T1I), to satisfy high speed and low power on-chip training requirements. By leveraging doped HfO2 with ferroelectricity, a non-volatile inverter is successfully…
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…
In the field of digital signal processing, the fast Fourier transform (FFT) is a fundamental algorithm, with its processors being implemented using either the pipelined architecture, well-known for high-throughput applications but weak in…