Related papers: FeFET-based MirrorBit cell for High-density NVM st…
In this study, we propose a measurement technique for evaluating ferroelectric polarization characteristics in ferroelectric field-effect transistors (FeFETs). Different from standard metal/ferroelectric/metal capacitors, the depletion and…
Ferroelectricity in the complementary metal-oxide semiconductor (CMOS)-compatible hafnia (HfO$_2$) is crucial for the fabrication of high-integration nonvolatile memory devices. However, the capture of ferroelectricity in HfO$_2$ requires…
We developed a method to detect the quantum nature of high spin molecules using muon spin rotation, and a three-step field cycle ending always with the same field. We use this method to demonstrate that the Fe8 molecule can remember 6…
Atomically thin layered two-dimensional materials, including transition-metal dichacolgenide (TMDC) and black phosphorus (BP), (1) have been receiving much attention, because of their promising physical properties and potential applications…
In this paper, we demonstrate low-thermal-budget ferroelectric field-effect transistors (FeFETs) based on two-dimensional ferroelectric CuInP2S6 (CIPS) and oxide semiconductor InZnO (IZO). The CIPS/IZO FeFETs exhibit non-volatile memory…
To address the increasing computational demands of artificial intelligence (AI) and big data, compute-in-memory (CIM) integrates memory and processing units into the same physical location, reducing the time and energy overhead of the…
In a large scale trapped atomic ion quantum computer, high-fidelity two-qubit gates need to be extended over all qubits with individual control. We realize and characterize high-fidelity two-qubit gates in a system with up to 4 ions using…
We demonstrate high accuracy classification for handwritten digits from the MNIST dataset ($\sim$98.00$\%$) and RGB images from the CIFAR-10 dataset ($\sim$86.80$\%$) by using resistive memories based on a 2D van-der-Waals semiconductor:…
The PZT/FeGa thin film memtranstor was prepared and the modulation of the magnetoelectric coefficient by external magnetic and electric fields was studied. The magnetoelectric coefficient of the PZT/FeGa memtranstor can be reversed by…
Two-dimensional ferroelectric materials are beneficial for power-efficient memory devices and transistor applications. Here, we predict out-of-plane ferroelectricity in a new family of buckled metal oxide (MO; M: Ge, Sn, Pb) monolayers with…
Current portable memory device relies heavily on flash memory technology for its implementation. New generation of non-volatile memory is likely to replace floating gates, charge-trapping memory currently still suffering from inadequate…
As the conventional scaling of logic devices comes to an end, functional wafer backside and 3D transistor stacking are consensus for next-generation logic technology, offering considerable design space extension for powers, signals or even…
Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected…
The Discrete Fourier Transform (DFT) is essential for various applications ranging from signal processing to convolution and polynomial multiplication. The groundbreaking Fast Fourier Transform (FFT) algorithm reduces DFT time complexity…
The non-destructive capacitance read-out of ferroelectric capacitors (FeCaps) based on doped HfO$_2$ metal-ferroelectric-metal (MFM) structures offers the potential for low-power and highly scalable crossbar arrays. This is due to a number…
Neuromorphic computing, inspired by biological intelligence, offers a pathway to revolutionize artificial intelligence (AI) by unifying memory and processing in an energy-efficient, sustainable framework for data-intensive tasks.…
We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract…
Quantum memory for flying optical qubits is a key enabler for a wide range of applications in quantum information science and technology. A critical figure of merit is the overall storage-and-retrieval efficiency. So far, despite the recent…
We propose a direct experimental extraction technique for trapped charges and quantitative energy band diagrams in the FeFETs with metal-insulator-ferroelectric-insulator-semiconductor (MIFIS) structure, derived from the physical…
The current work investigates the performance of dual-gate GaAs-nanowire FET as a charge-qubit device operating at room temperature. In compatibility with the state-of-the-art classical bit technology, it is shown that the single gate of a…