Related papers: FeFET-based MirrorBit cell for High-density NVM st…

Self-attention in Transformers generates dynamic operands that force conventional Compute-in-Memory (CIM) accelerators into costly non-volatile memory (NVM) reprogramming cycles, degrading throughput and stressing device endurance. Existing…

Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data…

In scenarios with limited training data or where explainability is crucial, conventional neural network-based machine learning models often face challenges. In contrast, Bayesian inference-based algorithms excel in providing interpretable…

In this work, we demonstrate the suitability of Reconfigurable Ferroelectric Field-Effect- Transistors (Re-FeFET) for designing non-volatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy…

In-memory computing (IMC) architecture emerges as a promising paradigm, improving the energy efficiency of multiply-and-accumulate (MAC) operations within DNNs by integrating the parallel computations within the memory arrays. Various…

The exponential growth of edge artificial intelligence demands material-focused solutions to overcome energy consumption and latency limitations when processing real-time temporal data. Physical reservoir computing (PRC) offers an…

Cache serves as a temporary data memory module in many general-purpose processors and domain-specific accelerators. Its density, power, speed, and reliability play a critical role in enhancing the overall system performance and quality of…

Ferroelecticity, one of the keys to realize nonvolatile memories owing to the remanent electric polarization, has been an emerging phenomenon in the two-dimensional (2D) limit. Yet the demonstrations of van der Waals (vdW) memories using 2D…

Ferroelectric field effect transistors (FeFETs) are being actively investigated with the potential for in-memory computing (IMC) over other non-volatile memories (NVMs). Content Addressable Memories (CAMs) are a form of IMC that performs…

In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…

In this work, we propose SEE-MCAM, scalable and compact multi-bit CAM (MCAM) designs that utilize the three-terminal ferroelectric FET (FeFET) as the proxy. By exploiting the multi-level-cell characteristics of FeFETs, our proposed SEE-MCAM…

Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in…

Compute-in-memory (CiM) emerges as a promising solution to solve hardware challenges in artificial intelligence (AI) and the Internet of Things (IoT), particularly addressing the "memory wall" issue. By utilizing nonvolatile memory (NVM)…

This paper reports a comprehensive study on the impacts of temperature-change, process variation, flicker noise and device aging on the inference accuracy of pre-trained all-ferroelectric (FE) FinFET deep neural networks.…

We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoelectric/ferromagnetic (PE/FM) heterostructures.…

Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap…

In this letter we propose the design and simulation study of a novel transistor, called HFinFET, which is a hybrid of a HEMT and a FinFET, to obtain excellent performance and good off state control. Followed by the description of the…

Few-layer ReS2 field-effect transistors (FET) with a local floating gate (FG) of monolayer graphene separated by a thin h-BN tunnel layer for application to a non-volatile memory (NVM) device is designed and investigated. FG-NVM devices…

FeFETs hold strong potential for advancing memory and logic technologies, but their inherent randomness arising from both operational cycling and fabrication variability poses significant challenges for accurate and reliable modeling.…

Camouflaging gate techniques are typically used in hardware security to prevent reverse engineering. Layout level camouflaging by adding dummy contacts ensures some level of protection against extracting the correct netlist. Threshold…