Related papers: High-Efficiency Photodetector Based On CVD-Grown W…
We designed, fabricated, and measured superconducting nanowire single-photon detectors (SSPDs) with low filling factor which achieve high system detection efficiency (SDE) and counting rate simultaneously. Numerical simulation reveals that…
We report on the fabrication and characterization of single-photon-sensitive WSi superconducting detectors with wire widths from 1 {\mu}m to 3 {\mu}m. The devices achieve saturated internal detection efficiency at 1.55 {\mu}m wavelength and…
We present a detailed study of an 8-channel $1\times1$ mm$^{2}$ WSi superconducting microwire single photon detector (SMSPD) array exposed to 120 GeV hadron beam and 120 GeV muon beam at the CERN Super Proton Synchrotron H6 beamline.…
Monolayer two-dimensional transitional metal dichalcogenides, such as MoS2, WS2 and WSe2, are direct band gap semiconductors with large exciton binding energy. They attract growing attentions for opto-electronic applications including solar…
Two-dimensional transition metal dichalcogenides (TMDs) are highly appealing for gas sensors, lab-on-a-chip devices and bio-sensing applications because of their strong light-matter interaction and high surface-to-volume ratio. The ability…
We have fabricated UV-sensitive photodetectors based on colloidal CdS nanocrystals and graphene. The nanocrystals act as a sensitizer layer that improves light harvesting leading to high responsivity of the detector. Despite the slow…
An ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface as an interdigitated transducer (IDT) is characterized under optical stimulus. The 2DEG-IDT photodetector exhibits a…
The increasing concentration of greenhouse gases, notably CH4 and CO2, has fueled global temperature increases, intensifying concerns regarding the prevailing climate crisis. Effectively monitoring these gases demands a detector spanning…
Detecting light at the single-photon level is one of the pillars of emergent photonic technologies. This is realized through state-of-the-art superconducting detectors that offer efficient, broadband and fast response. However, the use of…
Van der Waals heterostructures have recently emerged as a new class of materials, where quantum coupling between stacked atomically thin two-dimensional (2D) layers, including graphene, hexagonal-boron nitride, and transition metal…
Utilizing the excess energy of photoexcitation that is otherwise lost as thermal effects can improve the efficiency of next-generation light-harvesting devices. Multiple exciton generation (MEG) in semiconducting materials yields two or…
Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has…
2D semiconductors offer a promising pathway to replace silicon in next-generation electronics. Among their many advantages, 2D materials possess atomically-sharp surfaces and enable scaling the channel thickness down to the monolayer limit.…
A new phototransistor based on the mechanically-exfoliated single-layer MoS2 nanosheet is fabricated and its light-induced electric properties are investigated in details. Photocurrent generated from the phototransistor is solely determined…
We fabricate paper-supported semiconducting devices by rubbing a layered molybdenum disulfide (MoS2) crystal onto a piece of paper, similarly to the action of drawing/writing with a pencil on paper. We show that the abrasion between the…
Superconducting Nanowire Single Photon Detector (SNSPD) emerges as a potential candidate in the multiple fields requiring sensitive and fast photodetection. While nanowires of low temperature superconducting detectors are mature with…
Photo sensing and energy harvesting based on exotic properties of quantum materials and new operation principles have great potentials to break the fundamental performance limit of conventional photodetectors and solar cells. As topological…
Silicon photonics is being extended from the near-infrared (near-IR) window of 1.3-1.5 {\mu}m for optical fiber communications to the mid-infrared (mid-IR) wavelength-band of 2 {\mu}m or longer for satisfying the increasing demands in many…
Silicon is an extremely attractive material platform for integrated optics at telecommunications wavelengths, particularly for integration with CMOS circuits. Developing detectors and electrically pumped lasers at telecom wavelengths are…
Due to miniaturization of device dimensions, the next generations photodetector based devices are expected to be fabricated from robust nanostructured materials. Hence there is an utmost requirement of investigating exotic optoelectronic…