Related papers: High-Efficiency Photodetector Based On CVD-Grown W…
A multi-pixel photon sensor with single-photon sensitivity has been developed, based on a technology of a hybrid photo-detector (HPD) consisting of a photocathode and a multi-pixel avalanche diode (MP-AD). The developed HPD has a proximity…
Transition metal dichalcogenides (TMDs) are layered two-dimensional semiconductors explored for various optoelectronic applications, ranging from light-emitting diodes to single-photon emitters. To interact strongly with light, such devices…
Two-dimensional materials are attractive for constructing high-performance photonic chip-integrated photodetectors because of their remarkable electronic and optical properties and dangling-bond-free surfaces. However, the reported…
Quasi-one-dimensional (quasi-1D) materials are a newly arising topic in low-dimensional researches. As a result of reduced dimensionality and enhanced anisotropy, the quasi-1D structure gives rise to novel properties and promising…
Graphene based photo-detecting has received great attentions and the performance of such detector is stretching to both ends of high sensitivity and ultra-fast response. However, limited by the current photo-gating mechanism, the price for…
We present the model of an ultrasensitive mid-infrared (mid-IR) photodetector operating in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) domains consisting of a hybrid heterostructure made of nanopatterned graphene…
Bounded by the size, weight, and power consumption (SWaP) of conventional superconducting single photon detectors (SSPD), applications of SSPDs were commonly confined in the laboratory. However, booming demands for high efficiency single…
Increasing the efficiency and reducing the footprint of on-chip photodetectors enables dense optical interconnects for emerging computational and sensing applications. Avalanche photodetectors (APD) are currently the dominating on-chip…
Here, we report the photoconducting response of field-effect transistors based on three atomic layers of chemical vapor transport grown WSe$_2$ crystals mechanically exfoliated onto SiO$_2$. We find that tri-layered WSe$_2$ field-effect…
Superconducting nanowire single-photon detectors (SNSPDs) are the current leading technology for the detection of single-photons in the near-infrared (NIR) and short-wave infrared (SWIR) spectral regions, due to record performance in terms…
Monolayer MoS$_2$ is a direct band gap semiconductor with potential applications in optoelectronics and photonics. MoS$_2$ also has a large optical nonlinearity. However, the atomic thickness of the monolayer limits the strength of the…
The development of wearable photodetectors demands a unique combination of broadband optical sensitivity, mechanical flexibility, and skin-compatibility, with these requirements rarely met simultaneously by existing technologies. Here, we…
Mid-wave infrared (MWIR) frequency comb is expected to dramatically improve the precision and sensitivity of molecular spectroscopy. For high resolution application, high speed MWIR photodetector is one of the key components, however, the…
The integrated optical circuit is a promising architecture for the realization of complex quantum optical states and information networks. One element that is required for many of these applications is a high-efficiency photon detector…
Van der Waals junctions of two-dimensional materials with an atomically sharp interface open up unprecedented opportunities to design and study functional heterostructures. Semiconducting transition metal dichalcogenides have shown…
Optical imaging systems are widely used in the drone industry (optical navigation, terrain scanners), industry (distance measurement, 3D visualization), security (optical scanners and motion sensors), robotics (motion sensors, terrain or…
We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100…
A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. Comprehensive statistical analysis of electric data shows a high yield (96%) and…
Monolayer WS2 offers great promise for use in optical devices due to its direct bandgap and high photoluminescence intensity. While fundamental investigations can be performed on exfoliated material, large-area and high quality materials…
We explore a versatile technique for inverse designing 2D photonic crystal metasurfaces. These surfaces, known for their ability to manipulate light-matter interactions, can be precisely controlled to achieve specific functionalities. The…