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While detection of optical photons is today achieved with very high efficiencies, the detection of microwave fields at the photon level still poses non-trivial experimental challenges. In this Letter we propose a model of microwave…
Single-photon detectors (SPDs) at near infrared wavelengths with high system detection efficiency (> 90%), low dark count rate (< 1 counts per second, cps), low timing jitter (< 100 ps), and short reset time (< 100 ns) would enable landmark…
Novel group IVV 2D semiconductors (e.g., GeAs and SiAs) has arisen as an attractive candidate for broad-band photodetection and optoelectronic applications. This 2D family has wide tunable bandgap, excellent thermodynamic stability, and…
Current optical communication system operating at 1.55 {\mu}m wavelength band may not be able to continually satisfy the growing demand on the data capacity within the next few years. Opening a new spectral window at around 2 {\mu}m…
Efficient and scalable photocatalysts for solar water splitting remain a critical challenge in renewable energy research. The work presents a high-throughput first-principles discovery of two-dimensional (2D) type-II van der Waals…
Shortwave infrared (SWIR) has various applications, including night vision, remote sensing, and medical imaging. SWIR organic photodetectors (OPDs) offer advantages such as flexibility, cost-effectiveness, and tunable properties, however,…
Superconducting-nanowire single-photon detectors (SNSPDs) have enabled the realization of several quantum optics technologies thanks to their high detection efficiency, low dark-counts, and fast recovery time. However, the widespread use of…
Layered two-dimensional (2-D) semiconductors can be combined with other low-dimensional semiconductors to form non-planar mixed-dimensional van der Waals (vdW) heterojunctions whose charge transport behavior is influenced by the…
Photodetectors based on nano-structured superconducting thin films are currently some of the most sensitive quantum sensors and are key enabling technologies in such broad areas as quantum information, quantum computation and…
Two dimensional transition metal dichalcogenides exhibit strong excitonic responses, direct bandgaps, and remarkable nonlinear optical properties, making them highly attractive for integrated photonic, optoelectronic, and quantum…
A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 {\mu}m is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the…
The future interconnect links in intra- and inter-chip require the photodetector with high bandwidth, ultra-wide waveband, compact footprint, low-cost, and compatible integration process with silicon complementary metal-oxide-semiconductor…
Future wireless communication system embraces physical-layer signal detection with high sensitivity, especially in the microwave photon level. Currently, the receiver primarily adopts the signal detection based on semi-conductor devices for…
Cs-based semiconductors like $\mathrm{Cs_3Sb}$ and $\mathrm{Cs_2Te}$ are currently used as photocathodes in particle accelerators. Their performance as electron sources critically depends on their interaction with intense laser sources. In…
High-efficiency single-photon detection in the microwave domain is a key enabling technology for quantum sensing, communication, and information processing. However, the extremely low energy of microwave photons (~{\mu}eV) presents a…
The rapid development of coherent short-wavelength light sources in the extreme ultraviolet (EUV) and soft X-ray (SXR) regimes has created a growing need for advanced optoelectronic detection capabilities, particularly for…
The paper reviews recent progress in photodetectors, discussing vacuum-based detectors, semiconductor sensors, and gas-based detectors. The emphasis in this review is on the detection of low light levels, enhanced timing resolution, and…
Hybrid integration of plasmonics and Si photonics is a promising architecture for global microprocessor interconnects. To this end, practical plasmonic devices not only should provide athermal, broadband operation over wavelength-scale…
We report on multilayer high efficiency antireflection coating (ARC) design and development for use at UV wavelengths on CCDs and other Si-based detectors. We have previously demonstrated a set of single-layer coatings, which achieve >50%…
Physical principles of performance and main characteristics of a novel avalanche photodetector developed on the basis of MOS(metal-oxide-silicon) technology is presented. The photodetector contains a semitransparent gate electrode and a…