Related papers: Thermal resistance in superconducting flip-chip as…
We study interface thermal resistance (ITR) in a system consisting of two dissimilar anharmonic lattices exemplified by Fermi-Pasta-Ulam (FPU) model and Frenkel-Kontorova (FK) model. It is found that the ITR is asymmetric, namely, it…
We report a detailed analytic and numerical study of electronic thermal conductivity in d-wave superconductors. We compare theory of the cross over at low temperatures from T-dependence to T^3-dependence for increasing temperature with…
Interlayer rotation in van der Waals (vdW) materials offers great potential for manipulating phonon dynamics and heat flow in advanced electronics with ever higher compactness and power density. However, despite extensive theoretical…
An experimental investigation was made of the temperature dependence of the first step of a phase-slip line in a thin superconducting tin film. The depth of penetration of a nonequilibrium longitudinal electric field into the superconductor…
We have studied the resistivity, $\rho$, of a two-dimensional electron system in silicon in the temperature range 200 mK < T < 7.5 K at zero magnetic field at low electron densities, when the electron system is in the insulating regime. Our…
In the context of the ATHENA X-IFU Cryogenic AntiCoincidence Detector (CryoAC) development, we have studied the thermalization properties of a 2mm x 2mm SQUID chip. The chip is glued on a front-end PCB and operated on the cold stage of a…
The role of interchain hopping in quasi-one-dimensional (Q-1D) electron systems is investigated by extending the Kadanoff-Wilson renormalization group of one-dimensional (1D) systems to Q-1D systems. This scheme is applied to the extended…
This work introduces an electromagnetic metastructure based interconnect design that could address the critical need for electrical bandwidth and heat dissipation in high-speed, chiplet integration. We leverage silicon as the substrate for…
We present a fabrication process for fully superconducting interconnects compatible with superconducting qubit technology. These interconnects allow for the 3D integration of quantum circuits without introducing lossy amorphous dielectrics.…
We have developed a computer model for the simulation of resistive superconducting fault current limiters in three dimensions. The program calculates the electromagnetic and thermal response of a superconductor to a time-dependent overload…
Systematic experimental and theoretical research on the role of microstructure and interface thermal resistance on the thermal conductivity of the PbTe-CoSb3 bulk polycrystalline composite is presented. In particular, the correlation…
The thermal interface conductance between Al and Si was simulated by a non-equilibrium molecular dynamics method. In the simulations, the coupling between electrons and phonons in Al are considered by using a stochastic force. The results…
On-chip thermometry at deep-cryogenic temperatures is vital in quantum computing applications to accurately quantify the effect of increased temperature on qubit performance. In this work, we present a sub-1 K temperature sensor in CMOS…
We investigated experimentally the high-temperature electrical resistance of graphene interconnects. The test structures were fabricated using the focused ion beam from the single and bi-layer graphene produced by mechanical exfoliation. It…
Cooling high-power electronics in multilayer integrated circuits (ICs) is challenging for existing cooling methods. In this work, we designed through-chip microchannels (TCMCs) that cross the entire chip perpendicularly to the layers, with…
Electron-electron collisions lead to a T-square component in the electrical resistivity of Fermi liquids. The case of liquid $^3$He illustrates that the \textit{thermal} resitivity of a Fermi liquid has a T-square term, expressed in…
Controllable geometric manipulation via micromachining techniques provides a promising tool for enhancing useful topological electrical responses relevant to future applications such as quantum information science. Here we present…
3D integrated circuit (3D-IC) technology gained acceptance due to the ability to achieve extremely high level of integration, where hundreds of ICs are stacked vertically. Such level of integration can result in local power dissipation of…
Heat transfer at the interface between two materials is becoming increasingly important as the size of electronic devices shrinks. Most studies concentrate on the interfacial thermal conductance between either crystalline-crystalline or…
Varying the thermal boundary conductance at metal-dielectric interfaces is of great importance for highly integrated electronic structures such as electronic, thermoelectric and plasmonic devices where heat dissipation is dominated by…