Related papers: Thermal resistance in superconducting flip-chip as…
In this study, the synergistic effect of the particle size of the dispersed phase and the interface thermal resistance (R$_{int}$) between the phases on the phonon thermal conductivity ($\kappa_{ph}$) of the…
Traditional models of interfacial phonon scattering, including the acoustic mismatch model (AMM) and diffuse mismatch model (DMM), take into account the bulk properties of the material surrounding the interface, but not the atomic structure…
We compute the thermal conductance between two nanoparticles in contact based on the Molecular Dynamics technique. The contact is generated by letting both particles stick together under van der Waals attractions. The thermal conductance is…
Thermal welding of polymer-polymer interfaces is important for integrating polymeric elements into devices. When two different polymers are joined, the strength of the weld depends critically on the degree of immiscibility. We perform…
By combining Three Dimensional Integrated Circuits with the Network-on-Chip infrastructure to obtain 3D Networks-on-Chip (3D-NoCs), the new on-chip communication paradigm brings several advantages on lower power, smaller footprint and lower…
The Thermal Boundary Resistance at the interface between a nanosized Al film and an Al_{2}O_{3} substrate is investigated at an atomistic level. A room temperature value of 1.4 m^{2}K/GW is found. The thermal dynamics occurring in…
We study the thermal conductance across solid-solid interfaces as the composition of an intermediate matching layer is varied. In absence of phonon-phonon interactions, an added layer can make the interfacial conductance increase or…
In this article, we present a technology development of a superconducting qubit device 3D-integrated by flip-chip-bonding and processed following CMOS fabrication standards and contamination rules on 200 mm wafers. We present the utilized…
At T_c-T<<T_c(i.e., near T_c), in order to demonstrate the condudction mechanism and temperature dependencies of the diamagnetic-shielding susceptibility and the penetration depth, we fabricated Ba_1_xBiO_3(BKBO) thin films and measured the…
Contact resistivity rc of InP and GaAs based ohmic contacts was measured in the 4.2/300 K temperature range. Nonmonotonic dependences rc(T), with a minimum at temperature 50 K (150 K) for InP (GaAs) based contacts were obtained. The results…
Molecular dynamics simulations of thiolate-protected and solvated gold nanoparticles were carried out in the presence of a non-equilibrium heat flux between the solvent and the core of the particle. The interfacial thermal conductance ($G$)…
During the standard ac lock-in measurement of the resistance of a two-dimensional electron gas (2DEG) applying an ac current $I = \sqrt{2} I_0 \sin(\omega t)$, the electron temperature $T_e$ oscillates with the angular frequency $2 \omega$…
We consider the low-temperature thermal transport properties of the 2D proximity-induced superconducting state formed at the interface between a 3D strong topological insulator (TI) and a d-wave superconductor (dSC). This system is a…
This paper presents the design and benchmarking of cryogenic bulk-FETs using an experimentally calibrated TCAD framework that integrates 2-D electrostatics and interface-trap effects from $T = 2$ K to 300 K. For a 28-nm node device, carrier…
We present a thermal activated solvent bonding technique for the formation of embedded microstrucutres in polymer. It is based on the temperature dependent solubility of polymer in a liquid that is not a solvent at room temperature. With…
Accurate on-chip temperature sensing is critical for the optimal performance of modern CMOS integrated circuits (ICs), to understand and monitor localized heating around the chip during operation. The development of quantum computers has…
V-telluride superlattice thin films have shown promising performance for on-chip cooling devices. Recent experimental studies have indicated that device performance is limited by the metal/semiconductor electrical contacts. One challenge in…
Recent work on layered structures of superconductors (S) or normal metals (N) in contact with ferromagnetic insulators (FI) has shown how the properties of the previous can be strongly affected by the magnetic proximity effect due to the…
We have performed thermal conductance measurements on individual single crystalline silicon suspended nanowires. The nanowires (130 nm thick and 200 nm wide) are fabricated by e-beam lithography and suspended between two separated pads on…
During the fabrication process of large scale silicene through common chemical vapor deposition (CVD) technique, polycrystalline films are quite likely to be produced, and the existence of Kapitza thermal resistance along grain boundaries…