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Systems that require high-throughput and fault tolerance, such as key-value stores and databases, are looking to persistent memory to combine the performance of in-memory systems with the data-consistent fault-tolerance of nonvolatile…
Combining quasistatic and time-resolved transport measurements with X-ray and neutron diffraction experiments we study the non-equilibrium states that arise in pure and in Ti substituted Ca$_2$RuO$_4$ under the application of current…
The Mori's projection method, known as memory function method is an important theoretical formalism to study various transport coefficients. In the present work, we calculate the dynamical thermal conductivity in the case of metals using…
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that…
A memristor is a nonlinear two-terminal electrical element that incorporates memory features and nanoscale properties, enabling us to design very high-density artificial neural networks. To enhance the memory property, we should use…
We consider the quasi-static magnetic hysteresis model based on a dry-friction like representation of magnetization. The model has a consistent energy interpretation, is intrinsically vectorial, and ensures a direct calculation of the…
In the last decade, nanoscale resistive devices with memory have been the subject of intense study because of their possible use in brain-inspired computing. However, operational endurance is one of the limiting factors in the adoption of…
Variability in memristive devices based on h-BN dielectrics is studied in depth. Different numerical techniques to extract the reset voltage are described and the corresponding cycle-to-cycle variability is characterized by means of the…
Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory…
A model of superconducting computer memory exploiting the orthogonal spin transfer (OST) in the pseudospin valve (PS) that is controlled by the three-terminal Josephson superconducting-ferromagnetic transistor (SFT) is developed. The…
Vertical structures of SiO$_{2}$ sandwiched between a top tungsten electrode and conducting non-metal substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which…
We report on an experimental study of current induced switching in perpendicular magnetic random access memory (MRAM) cells with variable resistance-area products (RAs). Our results show that in addition to spin transfer torque (STT),…
Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of…
There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for non-volatile memory devices. With the aim of analysing potential materials for efficient current-operated magnetic junctions…
This paper introduces an analytical formula for the fractional-order conditional moments of nonlinear drift constant elasticity of variance (NLD-CEV) processes under regime switching, governed by continuous-time finite-state irreducible…
The nature of the resistive transition for a current applied parallel to the magnetic field in high-Tc materials is investigated by numerical simulation on the three dimensional Josephson junction array model. It is shown by using finite…
We derive the equations of motion of relativistic, resistive, second-order dissipative magnetohydrodynamics from the Boltzmann-Vlasov equation using the method of moments. We thus extend our previous work [Phys. Rev. D 98, 076009 (2018)],…
We perform the calculation of the dc resistivity as a function of temperature of the "strange-metal" state that emerges in the vicinity of a spin-density-wave phase transition in the presence of weak disorder. This scenario is relevant to…
Due to many limitations of Von Neumann architecture such as speed, memory bandwidth, efficiency of global interconnects and increase in the application of artificial neural network, researchers have been pushed to look into alternative…
Fractional-order dynamical systems are used to describe processes that exhibit long-term memory with power-law dependence. Notable examples include complex neurophysiological signals such as electroencephalogram (EEG) and blood-oxygen-level…