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In this paper we discuss a concept of dynamic memory and an application of fractional calculus to describe the dynamic memory. The concept of memory is considered from the standpoint of economic models in the framework of continuous time…
This paper proposes a variable metric splitting algorithm to solve the electrical behavior of neuromorphic circuits made of capacitors, memristive elements, and batteries. The gradient property of the memristive elements is exploited to…
In Valence Change Memory (VCM) cells, the conductance of an insulating switching layer is reversibly modulated by creating and redistributing point defects under an external field. Accurate simulations of the switching dynamics of these…
The 0+1-d Sachdev-Ye-Kitaev (SYK) fermionic model attracts nowadays a wide spread interest of the Condensed Matter community, as a benchmark toy model for strong electron correlation and non Fermi Liquid behavior. It is exactly solvable in…
DC electrical degradation as a form of dielectric and resistance breakdown is a common phenomenon in thin-film devices including resistance-switching memory. To obtain design data and to probe the degradation mechanism, highly accelerated…
We present a lattice model to study the equilibrium phase diagram of ordered alloys with one magnetic component that exhibits a low temperature phase separation between paramagnetic and ferromagnetic phases. The model is constructed from…
With the broad recent research on ferroelectric hafnium oxide for non-volatile memory technology, depolarization effects in HfO2-based ferroelectric devices gained a lot of interest. Understanding the physical mechanisms regulating the…
The emergence of resistive non-volatile memories opens the way to highly energy-efficient computation near- or in-memory. However, this type of computation is not compatible with conventional ECC, and has to deal with device unreliability.…
Memristive systems were proposed in 1976 by Leon Chua and Sung Mo Kang as a model for 2-terminal passive nonlinear dynamical systems which exhibit memory effects. Such systems were originally shown to be relevant to the modeling of action…
This work establishes a comprehensive analytical framework for studying implicit fractional differential systems with distributed memory and time delays. We develop novel fractional integral inequalities of Gr\"onwall--Wendroff type that…
Shape adaptive shape memory alloy hybrid composites (SMAHCs) are composites that incorporate shape memory alloys (SMAs) to realize shape transformation. Despite the availability of numerous analytical and finite element models for…
We propose a phase diagram for the vortex structure of high temperature superconductors which incorporates the effects of anisotropy and disorder. It is based on numerical simulations using the three-dimensional Josephson junction array…
The frequency dependent conductance of a two-dimensional quantum wire is computed using a current conserving formalism. The correction to the dc-conductance due to a time-dependent potential is related to the local partial density of states…
In this paper, we present the numerical analysis and simulations of a multi-dimensional memristive device model. Memristive devices and memtransistors based on two-dimensional (2D) materials have demonstrated promising potential for…
Most present applications of time-dependent density functional theory use adiabatic functionals, i.e. the effective potential at time t is determined solely by the density at the same time. This paper discusses a method that aims to go…
We investigate the transport characteristics of a redox system weakly coupled to leads in the Coulomb blockade regime. The redox system comprises a donor and acceptor separated by an insulating bridge in a solution. It is modeled by a…
We study a~quasilinear coupled magneto-quasistatic model from a~systems theoretic perspective.} First, by taking the injected voltages as input and the associated currents as output, we prove that the magneto-quasistatic system is passive.…
Analog in-memory computing (AIMC) accelerators enable efficient deep neural network computation directly within memory using resistive crossbar arrays, where model parameters are represented by the conductance states of memristive devices.…
Josephson junctions with ferromagnetic layers are vital elements in a new class of cryogenic memory devices. One style of memory device contains a spin valve with one "hard" magnetic layer and one "soft" layer. To achieve low switching…
We present a temperature-dependent extension of the approximate electronic conductivity formula of Hindley and Mott that leverages time-averaged fluctuations of the electronic density of states obtained from ab initio molecular dynamics. By…