Related papers: Fractional Marcus-Hush-Chidsey-Yakopcic current-vo…
A fractional derivative is a temporally nonlocal operation which is computationally intensive due to inclusion of the accumulated contribution of function values at past times. In order to lessen the computational load while maintaining the…
Resistive switching memories allow electrical control of the conductivity of a material, by inducing a high resistance (OFF) or a low resistance (ON) state, using electrochemical and ion transport processes. As alternative to high…
Interval approaches for the reachability analysis of initial value problems for sets of classical ordinary differential equations have been investigated and implemented by many researchers during the last decades. However, there exist…
Embedded non-volatile memory technologies such as resistive random access memory (RRAM) and spin-transfer torque magnetic RAM (STT MRAM) are increasingly being researched for application in neuromorphic computing and hardware accelerators…
In this paper, the voltage fluctuations of the Bonhoeffer van der pol oscillator system with a non-ideal capacitor were investigated. Here, the capacitor was modeled, using a fractional differential equation in which the order of the…
Previously, we demonstrated hysteretic and persistent changes of resistivity in two-terminal electronic devices based on charge trapping and detrapping at immobile metastable defects [H. Yin, A. Kumar, J.M. LeBeau, and R. Jaramillo, Phys.…
We derive a formula for the quantum corrections to the electrical current for a metal out of equilibrium. In the limit of linear current-voltage characteristics our formula reproduces the well known Altshuler-Aronov correction to the…
In this work we derive and study the analytical solution of the voltage and current diffusion equation for the case of a finite-length resistor-constant phase element (CPE) transmission line (TL) network that can represent a model for…
In this paper a computationally efficient approach is suggested for the stochastic modeling of an inhomogeneous reluctivity of magnetic materials. These materials can be part of electrical machines, such as a single phase transformer (a…
We consider the modeling of noise in a nonlinear, classical, resistive electrical component using two models: i) a continuous description based on a stochastic differential equation with a white thermal Gaussian noise; ii) a discrete, shot…
Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…
The recent co-optimization of memristive technologies and programming algorithms enabled neural networks training with in-memory computing systems. In this context, novel analog filamentary conductive-metal-oxide (CMO)/HfOx redox-based…
We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called…
Single crystals of Nd0.5Ca0.5MnO3 and Pr0.6Ca0.4MnO3 show current-induced insulator-metal transitions at low temperatures. In addition, the charge-ordering transition temperature decreases with increasing current. The electroresistive…
In his original work Josephson predicted that a phase-dependent conductance should be present in superconducting tunnel junctions, an effect difficult to detect, mainly because it is hard to single it out from the usual non-dissipative…
A Ginzburg-Landau model for the macroscopic behaviour of a shape memory alloy is proposed. The model is one-dimensional in essence, in that we consider the effect of the martensitic phase transition in terms of a uniaxial deformation along…
We experimentally demonstrate the operation of a Josephson magnetic random access memory unit cell, built with a Ni_80Fe_20/Cu/Ni pseudo spin-valve Josephson junction with Nb electrodes and an integrated readout SQUID in a fully planarized…
We present a computationally inexpensive yet accurate phenomenological model of memristive behavior in titanium dioxide devices by fitting experimental data. By design, the model predicts most accurately I-V relation at small non-disturbing…
A new concept for nonvolatile superconducting memories is proposed. The devices combine ferromagnetic dots for the storage of the data and Josephson junctions for their readout. Good scalability is expected for large scale integration.…
We establish, in general terms, the conditions to be satisfied by a time-fractional approach formulation of the Poisson-Nernst-Planck model in order to guarantee that the total current across the sample be solenoidal, as required by the…