Related papers: Fractional Marcus-Hush-Chidsey-Yakopcic current-vo…
We consider an incompressible magnetohydrodynamics (MHD) model in which the classical first-order time derivatives in the momentum and magnetic induction equations are replaced by variable-order Caputo time-fractional derivatives. This…
Single-molecule magnets weakly coupled to two ferromagnetic leads act as memory devices in electronic circuits---their response depends on history, not just on the instantaneous applied voltage. We show that magnetic anisotropy introduces a…
Fractional systems with Riemann-Liouville derivatives are considered. The initial memory value problem is posed and studied. We obtain explicit steering laws with respect to the values of the fractional integrals of the state variables. The…
Many physical, biological, and engineered systems exhibit memory effects that challenge Markovian models. Fractional calculus provides nonlocal operators to capture hereditary dynamics. This survey connects modeling, analysis, and…
Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional…
Resistance switching memory cells such as electrochemical metallization cells and valence change mechanism cells have the potential to revolutionize information processing and storage. However, the creation of deterministic resistance…
The operation of a novel nonvolatile memory device based on a conductive ferroelectric/non-ferroelectric thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady state solution of Poisson's…
Memristors are an electronic device whose resistance depends on the voltage history that has been applied to its two terminals. Despite its clear advantage as a computational element, a suitable transport model is lacking for the special…
We introduce an approach based on the Chapman-Kolmogorov equation to model heterogeneous stochastic circuits, namely, the circuits combining binary or multi-state stochastic memristive devices and continuum reactive components (capacitors…
It is shown that the consideration of the density of states variation in nanoscale electrochemical systems yields modulations in the rate constant and concomitant electrical currents. The proposed models extend the utility of…
In this paper, we propose the Reduced Order Hysteretic Magnetization (ROHM) model to describe the magnetization and instantaneous power loss of composite superconductors subject to time-varying magnetic fields. Once the parameters of the…
We present an adjoint sensitivity method for hybrid discrete -- continuous systems, extending previously published forward sensitivity methods. We treat ordinary differential equations and differential-algebraic equations of index up to two…
Motivated by advantages of current-mode design, this brief contribution explores the implementation of weight matrices in neuromemristive systems via current-mode memristor crossbar circuits. After deriving theoretical results for the range…
Memristor, memory resistor, is an emerging technology for computational memory. Number of different memristor models are available based on the physical experiments. To use memristor as a computational memory element, one should know how…
The development of neuromorphic systems based on memristive elements - resistors with memory - requires a fundamental understanding of their collective dynamics when organized in networks. Here, we study an experimentally inspired model of…
The current-driven domain wall motion in a ratchet memory due to spin-orbit torques is studied from both full micromagnetic simulations and the one dimensional model. Within the framework of this model, the integration of the anisotropy…
In this paper, we present the Reduced Order Hysteretic Flux (ROHF) model to describe the relationship between time-varying transport current and internal magnetic flux for composite superconductors. The ROHF model is parametrized using…
Abstract The present work describes a new fractional-order system of a two-compartment CA3 hippocampal pyramidal cell, which is known as Pinsky-Rinzel model with Caputo fractional derivative. Firstly, The transient of the solutions is…
Meminductors and memcapacitors do not allow a Lagrangian formulation in the classical sense since these elements are nonconservative in nature and the associated energies are not state functions. To circumvent this problem, a different…
Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been playing a major role in the investigation of the electrical…