Related papers: Radiative Carrier Lifetime in Ge$_{1-x}$Sn$_x$ Mid…
CMOS-compatible short- and mid-wave infrared emitters are highly coveted for the monolithic integration of silicon-based photonic and electronic integrated circuits to serve a myriad of applications in sensing and communications. In this…
This paper reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: 1) the demonstration of a set of photoconductors with Sn compositions ranging from 10.5% to 22.3%, showing the cut-off wavelength has…
We give the results of a study on the 222Rn decay we performed in the Gran Sasso Laboratory (LNGS) by detecting the gamma rays from the radon progeny. The motivation was to monitor the stability of radioactivity measuring several times per…
Cost-effective mid-wave infrared (MWIR) optoelectronic devices are of utmost importance to a plethora of applications such as night vision, thermal sensing, autonomous vehicles, free-space communication, and spectroscopy. To this end,…
This work investigated the small signal performance of Fabry-Perot Ge-on-Si lasers by modeling and simulations. The 3dB bandwidth dependence on the structure parameters such as poly-Si cladding thickness, Ge cavity width and thickness, and…
The lifetime of free neutrons measured in the lab has a long standing disparity of $\sim$9~s. A space-based technique has recently been proposed to independently measure the neutron lifetime using interactions between the galactic cosmic…
We report precise measurement of the Ds meson lifetime. The data were taken by the SELEX experiment (E781) spectrometer using 600 GeV/c Sigma-, pi- and p beams. The measurement has been done using 918 reconstructed Ds. The lifetime of the…
The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution of generated carriers. To obtain the lateral distribution of…
We report here a photoconductive material for THz generation and detection with sub-picosecond carrier lifetime made by C12 (Carbon) irradiation on commercially available semi-insulating (SI) GaAs. We are able to reduce the carrier lifetime…
We employ ultra-broadband terahertz-midinfrared probe pulses to characterize the optical response of photoinduced charge-carrier plasmas in high-resistivity silicon in a reflection geometry, over a wide range of excitation densities…
In semiconductors, photoexcited electrons and holes (carriers) initially occupy high-energy states, but quickly lose energy to phonons and relax to the band edge within a picosecond [1]. Increasing the lifetime of carriers in…
Germanium-on-Silicon (Ge-on-Si) is a promising, CMOS-compatible platform for integrated terahertz (THz) photonics, offering a low-cost alternative to III-V semiconductors. A primary challenge for Ge-based photoconductive antennas (PCAs),…
A self-consistent model of bipolar charge-carrier injection and transport processes in a semiconductor/insulator/conductor system is developed which incorporates space-charge effects in the description of the injection process. The amount…
We report on photoluminescence in the 3-7 $\mu$m mid-wave infrared (MWIR) range from sub-100 nm strained thin films of rocksalt PbSe(001) grown on GaAs(001) substrates by molecular beam epitaxy. These bare films, grown epitaxially at…
Nanoprobe X-ray diffraction (nXRD) using focused synchrotron radiation is a powerful technique to study the structural properties of individual semiconductor nanowires. However, when performing the experiment under ambient conditions, the…
Semiconductor devices favor high carrier mobility for reduced Joule heating and high thermal conductivity for rapid heat dissipation. The ability to accurately characterize the motion of charge carriers and heat carriers is necessary to…
We fabricate electric double-layer field-effect transistor (EDL-FET) devices on mechanically exfoliated few-layer graphene. We exploit the large capacitance of a polymeric electrolyte to study the transport properties of three, four and…
Defects in low-bandgap polymer based photodetectors play a critical role in determining switching characteristics in the near infra-red spectral-regime relevant to communication wavelength. We carry out detailed studies of the bandwidth…
Short-term changes in the resonance frequency of silicon nitride (SiN) nanomechanical resonators can be measured very precisely due to low thermomechanical fluctuations resulting from large mechanical quality factors. These properties…
Recombination of minority carriers in heavily doped n-InP wafers has been investigated using spectral and time-resolved photoluminescence at different temperatures. Studies of the transmitted luminescence were enabled by the partial…