Related papers: Radiative Carrier Lifetime in Ge$_{1-x}$Sn$_x$ Mid…
A graphene-optimized silicon carbide PIN detector was fabricated and its radiation tolerance under X-ray irradiation of 160 keV was evaluated. Its electrical properties, charge collection performance and time resolution of beta-particles…
Understanding the relaxation and recombination processes of excited states in two-dimensional (2D)/three-dimensional (3D) semiconductor heterojunctions is essential for developing efficient optical and (opto)electronic devices which…
Thermal properties have an outsized impact on efficiency and sensitivity of devices with nanoscale structures, such as in integrated electronic circuits. A number of thermal conductivity measurements for semiconductor nanostructures exist,…
A simple microscopic mechanism explaining the linear dependence of the radiative lifetime of free-moving two-dimensional excitons on their effective temperature is suggested. It is shown that there exists a characteristic effective…
Optical resonators are a powerful platform to control the spontaneous emission dynamics of excitons in solid-state nanostructures. Here, we study a MoSe$_2$-WSe$_2$ van-der-Waals heterostructure that is integrated in a widely tunable open…
Soft Gamma Repeaters (SGRs) are a class of rare, high-energy galactic transients that have episodes of short (~0.1 sec), soft (~30 keV), intense (~100 Crab), gamma-ray bursts. We report an analysis of the x-ray emission from 95 SGR1806-20…
The results of photoconduction study of the Peierls conductors are reviewed. The studied materials are quasi-one-dimensional conductors with the charge-density wave: K$_{0.3}$MoO$_3$, both monoclinic and orthorhombic TaS$_3$ and also a…
Swept Charge Devices (SCD) are novel X-ray detectors optimized for improved spectral performance without any demand for active cooling. The Chandrayaan-1 X-ray Spectrometer (C1XS) experiment onboard the Chandrayaan-1 spacecraft used an…
Quantifying the energetics and lifetimes of remnant radio-loud active galactic nuclei (AGNs) is much more challenging than for active sources due to the added complexity of accurately determining the time since the central black hole…
Point defects in hexagonal boron nitride (hBN) have attracted growing attention as bright single-photon emitters. However, understanding of their atomic structure and radiative properties remains incomplete. Here we study the excited states…
We present a theoretical investigation of the yet unexplored ultrafast processes and dynamics of the produced excited carriers upon irradiation of Silicon with femtosecond pulsed lasers in the mid-infrared (mid-IR) spectral region. The…
Efficiency droop effect under high injection in GaN-based light emitting diodes (LEDs) strongly depends on wavelength, which is still not well understood. In this paper, through differential carrier lifetime measurements on commercialized…
We discuss the charge carrier dynamics of the heavy-fermion compound CeCoIn$_5$ in the metallic regime measured by means of quasi-optical THz spectroscopy. The transmittance of electromagnetic radiation through a CeCoIn$_5$ thin film on a…
Intrinsic limits to device performance arise from fundamental material properties that define the best achievable operation, independent of engineering constraints. In GaN high-electron-mobility transistors (HEMTs), hot longitudinal optical…
Knowledge of the charge-carrier recombination lifetime, tau, is crucial for the various applications of photovoltaic perovskites. We studied the novel inorganic perovskite, CsPbBr3 and we observe recombination dynamics beyond 1 ms below 200…
By considering the changes in the interface charge-carrier densities of a single-carrier device as a function of injection-barrier heights and comparing these to the equilibrium, background charge-carrier density of a device with Ohmic…
For Si and Ge nanocrystals (NCs) embedded in wide band-gap matrices, Auger recombination (AR) and carrier multiplication (CM) lifetimes are computed exactly in a three-dimensional real space grid using empirical pseudopotential wave…
We have investigated optical conductivity spectra of $n$- and $p$-type Ba$_8$Ga $_{16}$Sn$_{30}$ ($\alpha$-BGS) with type-VIII clathrate structure, at temperatures from 296\,K down to 6\,K with a terahertz time-domain spectrometer…
The carrier emission efficiency of light emitting diodes is of fundamental importance for many technological applications, including the performance of GaN and other semiconductor photocathodes. We have measured the evolution of the emitted…
The controlled manipulation of the charge carrier concentration in nanometer thin layers is the basis of current semiconductor technology and of fundamental importance for device applications. Here we show that it is possible to induce a…