Related papers: Radiative Carrier Lifetime in Ge$_{1-x}$Sn$_x$ Mid…
Accurate modeling of charge transport and both thermal and luminescent radiation is crucial to the understanding and design of radiative thermal energy converters. Charge carrier dynamics in semiconductors are well-described by the…
Optical excitation and subsequent decay of graphene plasmons can produce a significant increase in charge-carrier temperature. An efficient method to convert this temperature elevation into a measurable electrical signal at room temperature…
Understanding the nature and behavior of vacancy-like defects in epitaxial GeSn metastable alloys is crucial to elucidate the structural and optoelectronic properties of these emerging semiconductors. The formation of vacancies and their…
A measurement of the K_S lifetime is presented using data recorded by the NA48 experiment at the CERN-SPS during 1998 and 1999. The K_S lifetime is derived from the ratio of decay time distributions in simultaneous, collinear K_S and K_L…
Semiconductor nanowires (NWs) have shown evidence of robust hot carrier effects due to their small dimensions. The relaxation dynamics of hot carriers in these nanostructures, generated by photo-absorption, are of great importance in…
Mid-infrared silicon photonics has recently emerged as a new technology for a wide range of applications such as optical communication, lidar, and bio-sensing. One key component enabling this technology is the mid-infrared optical modulator…
Single photon emitters play a central role in many photonic quantum technologies. A promising class of single photon emitters consists of atomic color centers in wide-bandgap crystals, such as diamond silicon carbide and hexagonal boron…
We calculate, within the leading-order dynamical-screening approximation, the electron self-energy and spectral function at zero temperature for extrinsic (or gated/doped) graphene. We also calculate hot carrier inelastic scattering due to…
Zinc-based nitride CaZn2N2 films grown by molecular beam epitaxy (MBE) with a plasma-assisted active nitrogen-radical source are promising candidates of next-generation semiconductors for light-emitting diodes and solar cells. This nitride…
Carrier dynamics in amorphous a-Si$_{1-x}$RE$_{x}$ (RE=Gd, Y) films has been studied in the doping regime close to the metal-insulator transition by means of infrared spectroscopy. Optical constants throughout the entire intra-gap region…
Rutile GeO2 is an emerging ultra-wide band gap semiconductor (UWBG) that has demonstrated excellent potential for applications in power electronic devices. Alloys of rutile SnO2, a well-established UWBG semiconducting oxide, with GeO2 are…
We present 11 independent measurements of the half-life and spectral shape of the 4-fold forbidden beta decay of 113-Cd using CdZnTe semiconductors with a total combined lifetime of 6.58 kg days. Our overall result gives a half-life of…
Attosecond noncollinear four wave mixing spectroscopy with one attosecond extreme ultraviolet (XUV) pulse and two few-cycle near-infrared (NIR) pulses was used to measure the autoionization decay lifetimes of inner valence electronic…
Two-photon time-resolved photoluminescence has been recently applied to various semiconductor devices to determine carrier lifetime and surface recombination velocities. So far the theoretical modeling activity has been mainly limited to…
$\rm{Ge}_{1-x-y}Si_{x}Sn_{y}$ alloys were grown on Ge buffer layers at ultra-low temperature using reactions of $\rm SnH_{4}$ and $\rm GeH_{3}Cl$ for the first time. The latter is a newly introduced CVD source designed for epitaxial…
We report persistent photoconductivity in $p$-type Sb$_2$Se$_3$ single crystals doped with Cd or Zn, where enhanced conductivity remains for hours after illumination ceases at temperatures below $\sim$25~K. Comparative transport and…
The Doppler-shift attenuation method was applied to measure the lifetime of the 4.03 MeV state in 19Ne. Utilizing a 3He-implanted Au foil as a target, the state was populated using the 20Ne(3He,alpha)19Ne reaction in inverse kinematics at a…
Nanowires (NWs) with their quasi-one-dimensionality often present different structural and opto-electronic properties than their thin-film counterparts. The thinner they are the larger these differences are, in particular in the…
It is shown that semiconductor nanoscale resonators with extreme dielectric confinement accelerate the diffusion of electron-hole pairs excited by nonlinear absorption. These novel cavity designs may lead to optical switches with superior…
Detecting the carrier scattering mechanisms in a materials system is important for transport related science and engineering. The approaches of fast laser process and electrical conductivity matching were used in previous literature, which…