Related papers: Radiative Carrier Lifetime in Ge$_{1-x}$Sn$_x$ Mid…
We have investigated electron dynamics in top gated graphene by measuring the gate admittance of a diffusive graphene capacitor in a broad frequency range as a function of carrier density. The density of states, conductivity and diffusion…
GeSn-based avalanche photodiode (APD) operating in shortwave infrared (SWIR) wavelength was demonstrated in this work. A separate absorption and charge multiplication (SACM) structure was employed to take advantage of long wavelength…
Halide perovskites have revolutionized optoelectronics by demonstrating that long carrier lifetime can be achieved in materials processed in relatively uncontrolled environments, whereas conventional inorganic semiconductors typically…
We calculate the theoretical non-degenerate two photon absorption and three color injected current response tensors for bulk GaAs and Ge$_{1-x}$Sn$_x$ for a range of alloy compositions. In particular, by including a ''pump'' beam we compare…
A true monolithic infrared photonics platform is within reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. Herein, we investigate the structural and optoelectronic properties of a 1.5 {\mu}m-thick…
Similar to other high quality crystalline absorbers, an accurate knowledge of surface passivation of crystalline Germanium (c-Ge) substrates is crucial for a straightforward improvement of photovoltaic device performance. For crystalline…
As one of the most important semiconductors, silicon (Si) has been used to fabricate electronic devices, waveguides, detectors, and solar cells etc. However, its indirect bandgap hinders the use of Si for making good emitters1. For…
Carrier recombination is a process that significantly influences the performance of semiconductor devices such as solar cells, photodiodes, and light-emitting diodes (LEDs). Therefore, a model that can accurately describe and quantify the…
$\text{Ge}_{1-y}\text{Sn}_y$ alloys with compositions in the 0.15 < $y$ < 0.30 range have been grown directly on Si substrates using a chemical vapor deposition approach that allows for growth temperatures as high as 290 $^{\circ}$C. The…
We report a transient absorption microscopy study of charge carrier dynamics in bulk MoS2 crystals at room temperature. Charge carriers are injected by interband absorption of a 555-nm pulse, and probed by measuring differential reflection…
High-quality multicrystalline Upgraded Metallurgical Grade Silicon (UMG-Si) offers significant advantages over conventional polysilicon-based PV technology, associated to lower cost, lower energy budget and lower carbon footprint. The aim…
The fabrication of high-quality thin superconducting films is essential for single-photon detectors. Their device performance is crucially affected by their material parameters, thus requiring reliable and nondestructive characterization…
The realization of a semiconductor near-unity absorber in the infrared will provide new capabilities to transform applications in sensing, health, imaging, and quantum information science, especially where portability is required.…
A simple yet precise optical technique for measuring the ambipolar carrier mobility in semiconductors is presented. Using tightly focused Gaussian laser beams in a photo-reflectance system, the modulated reflectance signal is measured as a…
Electrical spin transport and accumulation have been measured in highly Si doped Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the tuning of the effective carrier density of the channel…
We employ few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy to reveal simultaneously the intra- and interband carrier relaxation and the light-induced structural dynamics in nanoscale thin films of layered…
The availability of high-frequency pulsed emitters in the $2-2.5\,\mu$m wavelength range paved the way for a wealth of new applications in ultrafast spectroscopy, free-space and fiber-optical communications, surveillance and recognition,…
We have calculated the non-equilibrium quasiparticle and phonon distributions $f(E)$, $n(\Omega)$, where $E$ and $\Omega$ are the quasiparticle and phonon energies respectively, generated by the photons of the probe signal of a low…
The determination of minority-carrier lifetimes and surface recombination velocities is essential for the development of semiconductor technologies such as solar cells. The recent development of two-photon time-resolved microscopy allows…
Far-infrared cyclotron resonance photoconductivity (CRP) is investigated in HgTe quantum wells (QWs) of various widths grown on (013) oriented GaAs substrates. It is shown that CRP is caused by the heating of two-dimensional electron gas…