Related papers: Physics-Based and Closed-Form Model for Cryo-CMOS …

In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given by…

Cryogenic CMOS technology (cryo-CMOS) offers a scalable solution for quantum device interface fabrication. Several previous works have studied the characterization of CMOS technology at cryogenic temperatures for various process nodes.…

Silicon carbide is a wide-bandgap semiconductor with an emerging CMOS technology platform and it is widely deployed in high power and harsh environment electronics. This material is also attracting interest for quantum technologies through…

This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a…

This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisson's equation including bandgap widening, intrinsic…

This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to strong inversion and in the linear and saturation regimes.…

This paper presents an extensive characterization and modeling of a commercial 28-nm FDSOI CMOS process operating down to cryogenic temperatures. The important cryogenic phenomena influencing this technology are discussed. The…

This paper presents the first experimental investigation and physical discussion of the cryogenic behavior of a commercial 28 nm bulk CMOS technology. Here we extract the fundamental physical parameters of this technology at 300, 77 and 4.2…

Conventional CMOS technology operated at cryogenic conditions has recently attracted interest for its uses in low-noise electronics. We present one of the first characterizations of 180 nm CMOS technology at a temperature of 100 mK,…

Cryogenic characterization and modeling of 0.18um CMOS technology (1.8V and 5V) are presented in this paper. Several PMOS and NMOS transistors with different width to length ratios(W/L) were extensively characterized under various bias…

This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical temperature, the derived limit saturates to a value that is…

The control interface of a large-scale quantum computer will likely require electronic sub-systems that operate in close proximity to the qubits, at deep cryogenic temperatures. Here, we report the low-temperature performance of custom…

This paper outlines the establishment of a generic cryogenic CMOS database in which key electrical parameters and transfer characteristics of the MOSFETs are quantified as functions of device size, temperature/frequency responses.…

Scaling superconducting quantum computers to the fault-tolerant regime calls for a commensurate scaling of the classical control and readout stack. Today's systems largely rely on room-temperature, rack-based instrumentation connected to…

While nonclassical light sources are fundamental to quantum communication and computing, solid-state platforms like color centers and quantum dots require cryogenic temperatures to reach the performance levels necessary for practical…

In the pursuit of quantum computing, solid-state quantum systems, particularly superconducting ones, have made remarkable advancements over the past two decades. However, achieving fault-tolerant quantum computing for next-generation…

Large power consumption of silicon CMOS electronics is a challenge in very-large-scale integrated circuits and a major roadblock to fault-tolerant quantum computation. Matching the power dissipation of Si-MOSFETs to the thermal budget at…

This paper explores the potential of cryogenic semiconductor computing and superconductor electronics as promising alternatives to traditional semiconductor devices. As semiconductor devices face challenges such as increased leakage…

While cryogenic-temperature subthreshold swing (SS) in crystalline semiconductors has been widely studied, a careful study on the temperature-dependent SS in amorphous oxide semiconductors remains lacking. In this paper, a comprehensive…

Fully conductive band tails cause the subthreshold swing to saturate at temperatures above 1 K. However, recent measurements indicate that below 1 K, the subthreshold swing in certain MOSFET structures resumes a linear scaling with…