Related papers: Random Bitstream Generation using Voltage-Controll…
True random number generators (TRNGs) underpin modern cryptography, yet existing implementations face fundamental trade-offs between speed, scalability, and entropy quality. Here, we demonstrate that stochastic switching in the bistable…
The conventional computer architecture has been facing challenges answering the ever-increasing demands from emerging applications, such as AI, for energy-efficient computation and memory hardware systems. Computational Random Access Memory…
Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an…
We report the possibility of achieving an order of magnitude reduction in the energy dissipation needed to write bits in perpendicular magnetic tunnel junctions (p-MTJs) by simulating the magnetization dynamics under a combination of…
Physical devices exhibiting stochastic functions with low energy consumption and high device density have the potential to enable complex probability-based computing algorithms, accelerate machine learning tasks, and enhance hardware…
Nanoscale magnetic tunnel junction (MTJ) devices can efficiently convert thermal energy in the environment into random bitstreams for computational modeling and cryptography. We recently showed that perpendicular MTJs activated by…
Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requires strategies that simultaneously improve switching energy…
Low-energy random number generation is critical for many emerging computing schemes proposed to complement or replace von Neumann architectures. However, current random number generators are always associated with an energy cost that is…
We demonstrate a method to generate application-ready truly random bits from a magnetic tunnel junction driven by a Field-Programmable Gate Array (FPGA). We implement a real-time feedback loop that stabilizes the switching probability near…
Magnetic Tunnel Junctions (MTJs) have shown great promise as hardware sources for true random number generation (TRNG) due to their intrinsic stochastic switching behavior. However, practical deployment remains challenged by drift in…
Artificial Neural Networks (ANNs) have found widespread applications in tasks such as pattern recognition and image classification. However, hardware implementations of ANNs using conventional binary arithmetic units are computationally…
Stochastic magnetic tunnel junctions (sMTJ) using low-barrier nanomagnets have shown promise as fast, energy-efficient, and scalable building blocks for probabilistic computing. Despite recent experimental and theoretical progress, sMTJs…
We demonstrate that thermally stable perpendicular magnetic tunnel junctions (pMTJs), widely used in spin-transfer torque magnetic random-access memory, can be actuated with nanosecond pulses to exhibit tunable stochastic behavior. This…
Deterministic pseudo random number generators (PRNGs) used in generative artificial intelligence (GAI) models produce predictable patterns vulnerable to exploitation by attackers. Conventional defences against the vulnerabilities often come…
Unbiased sources of true randomness are critical for the successful deployment of stochastic unconventional computing schemes and encryption applications in hardware. Leveraging nanoscale thermal magnetization fluctuations provides an…
Stochastic p-Bit devices play a pivotal role in solving NP-hard problems, neural network computing, and hardware accelerators for algorithms such as the simulated annealing. In this work, we focus on Stochastic p-Bits based on high-barrier…
True random number generators (TRNGs) are fundamental building blocks for many applications, such as cryptography, Monte Carlo simulations, neuromorphic computing, and probabilistic computing. While perpendicular magnetic tunnel junctions…
In crossbar array structures, which serves as an "In-Memory" compute engine for Artificial Intelligence hardware, write sneak path problem causes undesired switching of devices that degrades network accuracy. While custom crossbar…
The emerging magneto-resistive RAM (MRAM) has considerable potential to become a universal memory technology because of its several advantages: unlimited endurance, lower read/write latency, ultralow-power operation, high-density, and CMOS…
Magnetic tunnel junctions (MTJ's) with low barrier magnets have been used to implement random number generators (RNG's) and it has recently been shown that such an MTJ connected to the drain of a conventional transistor provides a…