Related papers: Random Bitstream Generation using Voltage-Controll…

We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF) free layer, where the magnetic state of one sublayer is…

The large-scale fabrication of three-terminal magnetic tunnel junctions (MTJs) with high yield is becoming increasingly crucial, especially with the growing interest in spin-orbit torque (SOT) magnetic random access memory (MRAM) as the…

Generating high-quality random numbers with a Gaussian probability distribution function is an important and resource consuming computational task for many applications in the fields of machine learning and Monte Carlo algorithms. Recently,…

Superparamagnetic tunnel junctions (sMTJs) are emerging as promising components for stochastic units in neuromorphic computing, owing to their tunable random switching behavior. Conventional MTJ control methods, such as spin-transfer torque…

Recent advances in predictive data analytics and ever growing digitalization and connectivity with explosive expansions in industrial and consumer Internet-of-Things (IoT) has raised significant concerns about security of people's…

Probabilistic Ising machines (PIMs) provide a path to solving many computationally hard problems more efficiently than deterministic algorithms on von Neumann computers. Stochastic magnetic tunnel junctions (S-MTJs), which are engineered to…

Interest in Restricted Boltzmann Machine (RBM) is growing as a generative stochastic artificial neural network to implement a novel energy-efficient machine-learning (ML) technique. For a hardware implementation of the RBM, an essential…

Rapid random telegraph noise (RTN) in magnetic tunnel junctions (MTJs) is an important figure of merit for probabilistic computing applications. However, the interactions between the macrospin and spin waves with finite wave numbers reduce…

Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…

Spin filtering and its back-action spin transfer torque (STT) are key ingredients of latest spintronic devices based on magnetic tunnel junctions (MTJs). Resonant tunneling (RT), implemented by design or occurring as parasitic effects, is…

Naturally random devices that exploit ambient thermal noise have recently attracted attention as hardware primitives for accelerating probabilistic computing applications. One such approach is to use a low barrier nanomagnet as the free…

We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that…

By integrating the local voltage-controlled magnetic anisotropy (VCMA) effect, Dzyaloshinskii-Moriya interaction (DMI) effect, and spin-orbit torque (SOT) effect, we propose a novel device structure for field-free magnetic tunnel junction…

Extending Moore's law by augmenting complementary-metal-oxide semiconductor (CMOS) transistors with emerging nanotechnologies (X) has become increasingly important. One important class of problems involve sampling-based Monte Carlo…

Analog electronic non-volatile memories mimicking synaptic operations are being explored for the implementation of neuromorphic computing systems. Compound synapses consisting of ensembles of stochastic binary elements are alternatives to…

Stochasticity is ubiquitous in the world around us. However, our predominant computing paradigm is deterministic. Random number generation (RNG) can be a computationally inefficient operation in this system especially for larger workloads.…

The figures-of-merit for reservoir computing (RC), using spintronics devices called magnetic tunnel junctions (MTJs), are evaluated. RC is a type of recurrent neural network. The input information is stored in certain parts of the…

Stochastic magnetic tunnel junctions (s-MTJ) is a promising component of probabilistic bit (p-bit), which plays a pivotal role in probabilistic computers. For a standard cell structure of the p-bit, s-MTJ is desired to be insensitive to…

Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic memory and computing approaches. In parallel to spin transfer…

Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations…