English

Implementing Bayesian Networks with Embedded Stochastic MRAM

Emerging Technologies 2018-04-04 v2

Abstract

Magnetic tunnel junctions (MTJ's) with low barrier magnets have been used to implement random number generators (RNG's) and it has recently been shown that such an MTJ connected to the drain of a conventional transistor provides a three-terminal tunable RNG or a pp-bit. In this letter we show how this pp-bit can be used to build a pp-circuit that emulates a Bayesian network (BN), such that the correlations in real world variables can be obtained from electrical measurements on the corresponding circuit nodes. The pp-circuit design proceeds in two steps: the BN is first translated into a behavioral model, called Probabilistic Spin Logic (PSL), defined by dimensionless biasing (h) and interconnection (J) coefficients, which are then translated into electronic circuit elements. As a benchmark example, we mimic a family tree of three generations and show that the genetic relatedness calculated from a SPICE-compatible circuit simulator matches well-known results.

Keywords

Cite

@article{arxiv.1801.00497,
  title  = {Implementing Bayesian Networks with Embedded Stochastic MRAM},
  author = {Rafatul Faria and Kerem Y. Camsari and Supriyo Datta},
  journal= {arXiv preprint arXiv:1801.00497},
  year   = {2018}
}
R2 v1 2026-06-22T23:33:55.192Z