Related papers: Emergence of large spin-charge interconversion at …

Efforts to achieve efficient injection of spin-polarized electrons into a semiconductor, a key prerequisite for developing electronics that exploit the electron's spin degree of freedom, have so far met with limited success. Here we report…

We investigate theoretically spin-resolved transport, spin filtering, and nonreciprocal effects in an Altermagnet/Ising superconductor (AM/ISC) junction with a spin-active interface. Using a modified Bogoliubov-de Gennes framework within…

Spin-charge interconversion (SCI) phenomena have attracted a growing interest in the field of spintronics as means to detect spin currents or manipulate the magnetization of ferromagnets. The key ingredients to exploit these assets are a…

DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co90Fe10/Cu/Ni80Fe20 pillars. A perpendicular external field enhanced the coercive field separation between the reference layer…

We studied spin transport in four organic semiconductors (OSCs) with different electronic properties, with Fe and Co as the top and bottom ferromagnetic (FM) contacts, respectively. Magnetoresistance (MR) effects were observed up to room…

We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect…

The origin of spin-orbit torques generated from the conversion of charge-to-spin currents is of considerable debate. Solid understanding of the physics behind is key to the development of current and voltage controlled switching dynamics in…

The spin-momentum locking at the Dirac surface state of a topological insulator (TI) offers a distinct possibility of a highly efficient charge-to-spin current (C-S) conversion compared with spin Hall effects in conventional paramagnetic…

We probe spin transport in Cu_{2}O by measuring spin valve effect in La_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/Co and La_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/La_{0.7}Sr_{0.3}MnO_{3} epitaxial heterostructures. In La_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/Co systems we…

We have studied the structural, electronic and magnetic properties of spinel $\rm Co_3O_4$(111) surfaces and their interfaces with ZnO (0001) using density functional theory (DFT) within the Generalized Gradient Approximation with on-site…

Dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices, such as the Si/SiO$_2$ MOS field effect transistor (MOSFET), possess trap states that can be visualized with electrically-detected spin resonance…

The great potential of memristive devices for real-world applications still relies on overcoming key technical challenges, including the need for a larger number of stable resistance states, faster switching speeds, lower SET/RESET…

The organic spinterface describes the spin-polarized properties that develop, due to charge transfer, at the interface between a ferromagnetic metal (FM) and the molecules of an organic semiconductor. Yet, if the latter is also magnetic…

$\text{RuO}_2$, a transition metal oxide, is attracting attention in spintronics for its unique altermagnetic properties, which influence spin currents. Its ability to produce large spin-orbit torques and spin Hall effects is key for…

Reducing energy dissipation while increasing speed in computation and memory is a long-standing challenge for spintronics research. In the last 20 years, femtosecond lasers have emerged as a tool to control the magnetization in specific…

A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…

Ferromagnetic semiconductor europium monoxide (EuO) is believed to be an effective spin injector when directly integrated with silicon. Injection through spin-selective ohmic contact requires superb structural quality of the interface…

Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality. To date, the inherent chemical reactivity between EuO and Si has prevented…

Breaking of the inversion symmetry at the interface between different materials may dramatically enhance spin-orbit interaction in the vicinity of the interface. We incorporate the effects of this interfacial spin-orbit coupling (ISOC) into…

Interfacial two-dimensional electron gas (2DEG) formed at the perovskite-type oxide, such as SrTiO3, has attracted significant attention due to its properties of ferromagnetism, superconductivity, and its potential application in…