Dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices, such as the Si/SiO2 MOS field effect transistor (MOSFET), possess trap states that can be visualized with electrically-detected spin resonance techniques, however the interpretation of such measurements has been hampered by the lack of a general theory of the phenomena. This article presents such a theory for two electrical spin-resonance techniques, electrically detected magnetic resonance (EDMR) and the recently observed near-zero field magnetoresistance (NZFMR), by generalizing Shockley Read Hall trap-assisted recombination current calculations via stochastic Liouville equations. Spin mixing at this dielectric interface occurs via the hyperfine interaction, which we show can be treated either quantum mechanically or semiclassically, yielding distinctive differences in the current across the interface. By analyzing the bias dependence of NZFMR and EDMR, we find that the recombination in a Si/SiO2 MOSFET is well understood within a semiclassical approach.
@article{arxiv.2008.08121,
title = {Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO$_2$ interface},
author = {Nicholas J. Harmon and James P. Ashton and Patrick M. Lenahan and Michael E. Flatté},
journal= {arXiv preprint arXiv:2008.08121},
year = {2020}
}
Comments
16 pages, 11 figures. Submitted to Applied Physics Letters Materials