Related papers: Near-Zero-Field Spin-Dependent Recombination Curre…
Electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (NZFMR) are techniques that probe defect states at dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices such as the…
We investigate the spin species relevant for the spin-dependent recombination used for the electrical readout of coherent spin manipulation in phosphorus-doped silicon. Via a multi-frequency pump-probe experiment in pulsed electrically…
Electrically detected magnetic resonance is used to identify recombination centers in a set of Czochralski grown silicon samples processed to contain strained oxide precipitates with a wide range of densities (~ 1e9 cm-3 to ~ 7e10 cm-3).…
Spin-dependent transport processes in thin near-surface doping regions created by low energy ion implantation of arsenic in silicon are detected by two methods, spin-dependent recombination (SDR) using microwave photoconductivity and…
SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects at the SiC/SiO$_2$ interface degrade the ideal behavior of…
We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…
Electrically-detected magnetic resonance (EDMR) provides a highly sensitive method for reading out the state of donor spins in silicon. The technique relies on a spin-dependent recombination (SDR) process involving dopant spins that are…
We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at…
Continuous wave optically and electrically detected magnetic resonance spectroscopy (cwODMR/cwEDMR) allow the investigation of paramagnetic states involved in spin-dependent transitions, like recombination and transport. Although…
We present experiments to systematically study the time constants of spin-dependent recombination processes in semiconductors using pulsed electrically detected magnetic resonance (EDMR). The combination of time-programmed optical…
We present a theoretical model that describes electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically…
Using low-energy muons, we map the charge carrier concentration as a function of depth and electric field across the \SiOSi interface up to a depth of \SI{100}{\nano\meter} in Si-based MOS capacitors. The results show that the formation of…
Spin-dependent processes play a crucial role in organic electronic devices. Spin coherence can give rise to spin mixing due to a number of processes such as hyperfine coupling, and leads to a range of magnetic field effects. However, it is…
An experimental study on the nature of spin-dependent excess charge carrier transitions at the interface between (111) oriented phosphorous doped ([P] ~ 10^15 cm^3) crystalline silicon and silicon dioxide at high magnetic field (B_0 ~ 8.5…
We have reconsidered the problem of spin injection across ferromagnet/non-magnetic-semiconductor (FM/NMS) and dilute-magnetic-semiconductor/non-magnetic-semiconductor interfaces, for structures with \textit{finite} magnetic layers (FM or…
A spin metal-oxide-semiconductor field-effect-transistor (spin MOSFET), which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device for spintronic logic. Previous simulation studies predict…
Silicon Carbide is renowned for its exceptional thermal stability, making it a crucial material for high-temperature power devices in extreme environments. While optically detected magnetic resonance in SiC has been widely studied for…
Spin-dependent relaxation and recombination processes in $\gamma$-irradiated $n$-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the…
The investigation of the properties of metal-semiconductor interfaces has gained significant attention due to the unique features that emerge from the combination of both metal and semiconductor attributes. In this report, the magnetic…
We study the refraction effect of electronic wave in hole-doped lateral heterojunctions of metallic and semiconducting transition-metal dichalcogenide monolayers. This effect is theoretically investigated in 2$H$-type MoSe$_2$-NbS$_2$ and…