Related papers: Emergence of large spin-charge interconversion at …
Using orbital angular momentum (OAM) currents in nanoelectronics, for example, for magnetization manipulation via spin-orbit torque (SOT), represents a growing field known as "spin-orbitronics". Here, using the density functional theory…
Control of the microwave signal generated by spin-transfer torque oscillators (STOs) is crucial for their applications in spin wave generation and neuromorphic computing. This study investigates injection locking of a DC-driven vortex STO…
Topological insulators (TIs) are emerging materials for next-generation low-power nanoelectronic and spintronic device applications. TIs possess non-trivial spin-momentum locking features in the topological surface states in addition to the…
Development of power efficient spintronics devices has been the compelling need in the post-CMOS technology era. The effective tunability of spin-orbit-coupling (SOC) in bulk and at the interfaces of hybrid materials stacking is a…
Topological insulators (TIs) hold great promises for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform allowing for the exploitation of these assets is still…
Recent experimental breakthroughs, particularly for single-qubit and two-qubit gates exceeding the error correction threshold, highlight silicon spin qubits as leading candidates for fault-tolerant quantum computation. In the existing…
The development of a spintronics device relies on efficient generation of spin polarized currents and their electric field controlled manipulation. While observation of exceptionally long spin relaxation lengths make graphene an intriguing…
Current memcapacitor implementations typically demand complex fabrication processes or depend on organic materials exhibiting poor environmental stability and reproducibility. Here, we demonstrate memcapacitor structures utilizing a quasi…
Under various conditions of the growth process, when the presumably unconventional superconductor Sr$_2$RuO$_4$ (SRO) contains micro-inclusions of Ru metal, the superconducting critical temperature increases significantly. An STEM study…
Current-induced torques originating from earth-abundant 3d elements offer a promising avenue for low-cost and sustainable spintronic memory and logic applications. Recently, orbital currents -- transverse orbital angular momentum flow in…
We demonstrated that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (<= 2 nm) in Fe/Mg/MgO/n+-Si tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we…
Superconductivity in La$_{4}$Ni$_{3}$O$_{10}$ has been reported to emerge upon suppression of intertwined spin and charge density wave (SDW/CDW) order, suggesting a possible connection to the pairing mechanism. Here we report a systematic…
The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin-orbit (SO) element for information read-out through…
Spin electronics (spintronics) exploits the magnetic nature of the electron, and is commercially exploited in the spin valves of disc-drive read heads. There is currently widespread interest in using industrially relevant semiconductors in…
Engineering artificial systems by twisting and stacking van der Waals materials has proven to be an excellent platform for exploring emergent quantum phenomena that can be significantly different from the constituents. Recent advances in…
We identify the presence of monoatomic steps at the Si/SiGe or Si/SiO$_2$ interface as a dominant source of variations in the dephasing time of Si quantum dot (QD) spin qubits. First, using atomistc tight-binding calculations we show that…
The discovery of high-temperature superconductivity (SC) with $T_c\approx 80$ K in the pressurized La$_3$Ni$_2$O$_{7}$ has aroused great interests. Currently, due to technical difficulties, most experiments on La$_3$Ni$_2$O$_{7}$ can only…
Spin waves in insulating magnets are ideal carriers for spin currents with low energy dissipation. An electric field can modify the dispersion of spin waves, by directly affecting, via spin-orbit coupling, the electrons that mediate the…
The ability to perform efficient electrical spin injection from ferromagnetic metals into two-dimensional semiconductor crystals based on transition metal dichalcogenide monolayers is a prerequisite for spintronic and valleytronic devices…
After more than a decade of extensive research on the magnetic order triggered by lattice defects in a wide range of nominally non-magnetic materials, we report its application in a spintronic device. This device is based on a spin-filter…