Related papers: Emergence of large spin-charge interconversion at …
Diluted oxide interface of LaAl1-xMnxO/SrTiO3 (LAMO/STO) provides a new way of tuning the ground states of the interface between the two band insulators of LAO and STO from metallic/superconducting to highly insulating. Increasing the Mn…
We calculate the spin-polarized electronic transport through a molecular bilayer spin valve from first principles, and establish the link between the magnetoresistance and the spin-dependent inter- actions at the metal-molecule interfaces.…
(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit torques (SOTs) that can be used to manipulate the…
The magnetic Gilbert damping and spin-orbital to charge interconversion phenomenon play vital role in controlling the modern spintronics device performances. Though the ferromagnets (FMs) and heavy metals (HMs) are considered to be the key…
The spin transport and spin-to-charge current conversion properties of bismuth are investigated using permalloy/copper/bismuth (Py/Cu/Bi)lateral spin valve structures. The spin current is strongly absorbed at the surface of Bi, leading to…
Two-dimensional electron gas (2DEG) formed at the interface between SrTiO3 (STO) and LaAlO3 (LAO) insulating layer is supposed to possess strong Rashba spin-orbit coupling. To date, the inverse Edelstein effect (i.e. spin-to-charge…
The spin-transfer torque (STT) in Co2MnSi(CMS)/Al/Co2MnSi spin-valve system with and without interfacial disorder is studied by a first-principles noncollinear wave-function-matching method. It is shown that in the case of clean interface…
Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here we employ a simple and scalable material system of conductive oxide…
Spin currents can modify the magnetic state of ferromagnetic ultrathin films through spin-orbit torque. They may be generated by means of spin-orbit interaction by either bulk or interfacial phenomena. Electrical transport measurements…
Magnetic heterostructures that combine large spin-orbit torque efficiency, perpendicular magnetic anisotropy, and low resistivity are key to develop electrically-controlled memory and logic devices. Here we report on vector measurements of…
The magnetic correlations at the superconductor/ferromagnet (S/F) interfaces play a crucial role in realizing dissipation-less spin-based logic and memory technologies, such as triplet-supercurrent spin-valves and "{\pi}" Josephson…
Spin waves are excitations in ferromagnetic media that have been proposed as information carriers in hybrid spintronic devices with much lower operation power than conventional charge-based electronics. Their wave nature can be exploited in…
Spin backflow and spin-memory loss have been well established to considerably lower the interfacial spin transmissivity of metallic magnetic interfaces and thus the energy efficiency of spin-orbit torque technologies. Here we report that…
Magnetization dynamics, which determine the speed of magnetization switching and spin information propagation, play a central role in modern spintronics. Gaining its control will satisfy the different needs of various spintronic devices. In…
Despite a clear demonstration of bistability in spin-crossover (SCO) materials, the absence of long-range magnetic order and poor electrical conductivity limit their prospect in spintronic and nanoelectronic applications. Intending to…
Researchers from Intel Corporation recently proposed "Magneto-Electric Spin Orbit (MESO)" logic as a new strategy for beyond-CMOS electronics [1]. The Intel researchers project that this concept has the potential to reduce the switching…
Using the charge-conserving Floquet-Green function approach to open quantum systems driven by external time periodic potential, we analyze how spin current pumped (in the absence of any dc bias voltage) by the precessing magnetization of a…
Conductive bridge random access memory devices such as Cu/SiO2/W are promising candidates for applications in neuromorphic computing due to their fast, low-voltage switching, multiple-conductance states, scalability, low off-current, and…
While tremendous success has been achieved to date in creating both single phase and composite magnetoelectric materials, the quintessential electric-field control of magnetism remains elusive. In this work, we demonstrate a linear…
Spin injection is a powerful experimental probe into a wealth of nonequilibrium spin-dependent phenomena displayed by materials with spin-orbit coupling (SOC). Here, we develop a theory of coupled spin-charge diffusive transport in…