Magnetization dynamics, which determine the speed of magnetization switching and spin information propagation, play a central role in modern spintronics. Gaining its control will satisfy the different needs of various spintronic devices. In this work, we demonstrate that the surface oxidized Cu (CuOx) can be employed for the tunability of magnetization dynamics of ferromagnet (FM)/heavy metal (HM) bilayer system. The capping CuOx layer in CoFeB/W/CuOx trilayer reduces the magnetic damping value in comparison with the CoFeB/W bilayer. The magnetic damping even becomes lower than that of the CoFeB/CuOx by ~ 16% inferring the stabilization of anti-damping phenomena. Further, the reduction in damping is accompanied by a very small reduction in the spin pumping-induced output DC voltage in the CoFeB/W/CuOx trilayer. The simultaneous observation of anti-damping and spin-to-charge conversion can be attributed to the orbital Rashba effect observed at the HM/CuOx interface. Our experimental findings illustrate that the cost-effective CuOx can be employed as an integral part of modern spintronics devices owing to its rich underneath spin-orbital physics.
@article{arxiv.2401.14708,
title = {Efficient Control of Magnetization Dynamics Via W/CuO$_\text{x}$ Interface},
author = {Antarjami Sahoo and Haifeng Ding and Antonio Azevedo and Subhankar Bedanta},
journal= {arXiv preprint arXiv:2401.14708},
year = {2024}
}