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Structural analysis of self-catalyzed GaAs nanowires (NWs) grown on lithography-free oxide patterns is described with insight on their growth kinetics. Statistical analysis of templates and NWs in different phases of the growth reveals…
We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/Al$_{2}$O$_{3}(0001)$ substrates. The shifts of Bragg peaks in…
We have investigated the magnetoresistance of strongly asymmetric double-well structures formed by a thin AlGaAs barrier grown far from the interface in the GaAs buffer of standard heterostructures. In magnetic fields oriented parallel to…
We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $50 {\rm nm}$-thick InAs layer grown by molecular beam…
The photonic band dispersion and density of states (DOS) are calculated for the three-dimensional (3D) hexagonal structure corresponding to a distributed Bragg reflector patterned with a 2D triangular lattice of circular holes. Results for…
In this work, we report the first account of monolithically-fabricated vertical cavity surface emitting lasers (VCSELs) of densely-packed, orientation-controlled, atomically flat colloidal quantum wells (CQWs) using a self-assembly method…
Deep ultraviolet (UV) optical emission below 250 nm (~5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here that high-quality epitaxial ultrathin binary GaN quantum disks…
Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology, tunable band structure, and potential for a direct bandgap…
AxFe2-ySe2 (A=K, Rb, Cs) superconductors may show a complex mixture of structural phases even in a single crystal form. A full sphere of the diffraction intensity has been collected, with the help of synchrotron radiation, for Cs0.8Fe1.6Se2…
InGaAs/GaAsBi/InGaAs quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type II band-edge line-up. Both type I and type II transitions were observed in the Bi containing W QWs and the…
We study arrays of silver split-ring resonators operating at around 1.5-{\mu}m wavelength coupled to an MBE-grown single 12.7-nm thin InGaAs quantum well separated only 4.8 nm from the wafer surface. The samples are held at liquid-helium…
We report the design of GaAs-based monolithic valley phononic crystals (VPnCs) with multiple complete phononic bandgaps, which support simultaneous valley-protected edge states with different symmetries in the gigahertz (GHz) range.…
In this paper, forward and backward propagating waves and reflectivity in an optical waveguide structure namely the fiber Bragg reflector also considered as a one dimensional photonic crystal, are analytically computed using coupled mode…
Deterministic and bright quantum light sources based on scalable semiconductor technologies are a crucial building block for future quantum communication networks. While circular Bragg gratings (CBGs) are highly effective for extracting…
We report an easy-to-fabricate microcavity design to produce optically pumped high-$\beta$ quantum dot microlasers. Our cavity concept is based on a buried photonic-defect for tight lateral mode confinement in a quasi-planar microcavity…
We report growth of high quality ZnO/Zn0.8Mg0.2O quantum well on M-plane oriented ZnO substrates. The optical properties of these quantum wells are studied by using reflectance spectroscopy. The optical spectra reveal strong in-plane…
We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is…
Wafer-scale growth of two-dimensional semiconductors remains a key challenge for their integration into photonic technologies. While most studies of two-dimensional semiconductors have focused on transition metal dichalcogenides and their…
Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy. Density of the…
Monolithic integration of III-V optoelectronic devices with materials for various functionalities inexpensively is always desirable. Polysilicon (poly-Si) is an ideal platform because it is dopable and semi-conducting and can be deposited…