Related papers: Compact modeling technology for the simulation of …
Tri-gate ferroelectric FETs with Hf0.5Zr0.5O2 gate insulator for memory and neuromorphic applications are fabricated and characterized for multi-level operation. The conductance and threshold voltage exhibit highly linear and symmetric…
We obtain the output and transfer characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation.…
The mobility-degradation-based model for the drain-to-source or output resistance of a graphene field-effect-transistor is linearized here using a Taylor series approximation. This simplification is shown to be valid from magnitudes of the…
A fitting model is developed for accounting the asymmetric ambipolarities in the I-V characteristics of graphene field-effect transistors (G-FETs) with doped channels, originating from the thermionic emission and interband tunneling at the…
In this work, we investigate the transport phenomena in compound semiconductor material based buried channel Quantum Well MOSFET with a view to developing a simple and effective model for the device current. Device simulation has been…
The intrinsic mobility degradation coefficient, contact resistance and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different technologies by considering a novel transport model embracing…
The shifted frequency-based electromagnetic transient (SFEMT) simulation has greatly improved the computational efficiency of traditional electromagnetic transient (EMT) simulation for the ac grid. This letter proposes a novel interface for…
Compact semiconductor device models are essential for efficiently designing and analyzing large circuits. However, traditional compact model development requires a large amount of manual effort and can span many years. Moreover, inclusion…
Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as…
We have investigated the non-quasi-static (NQS) effects in graphene field-effect transistors (GFETs), which are relevant for GFET operation at high frequencies as a result of significant carrier inertia. A small-signal NQS model is derived…
A grid-feeding converter system is added to a novel power system transient simulation scheme based on frequency response optimized integrators considering second order derivative. The converter system and its implementation in the…
Thermal management is an important challenge in modern electronics, avionics, automotive, and energy storage systems. While passive thermal solutions (like heat sinks or heat spreaders) are often used, actively modulating heat flow (e.g.…
Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall insulators are being considered as advanced logic transistors due to their potentially superior performance originating from the dissipationless edge…
The development of flexible electronics operating at radio-frequencies (RF) requires materials that combine excellent electronic performance and the ability to withstand high levels of strain. In this work, we fabricate graphene…
Field-effect transistors (FETs) predominantly utilize electrons for signal processing in modern electronics. In contrast, phonon-based field-effect transistors (PFETs)-which employ phonons for active thermal management-remain markedly…
We report the batch fabrication of graphene field-effect-transistors (GFETs) with nanoperforated graphene as channel. The transistors were cut and encapsulated. The encapsulated GFETs display saturation regions that can be tuned by…
Electro-optic modulation is a technology-relevant function for signal keying, beam steering, or neuromorphic computing through providing the nonlinear activation function of a perceptron. With silicon-based modulators being bulky and…
This paper will deal with the modeling-problem of combining thermal subsystems (e.g. a semiconductor module or package with a cooling radiator) making use of reduced models. The subsystem models consist of a set of Foster-type thermal…
The reliability of analysis is becoming increasingly important as point-of-care diagnostics are transitioning from single analyte detection towards multiplexed multianalyte detection. Multianalyte detection benefits greatly from…
Two-dimensional materials-based field-effect transistors (2DM-FETs) exhibit both ambipolar and unipolar transport types. To physically and compactly cover both cases, we put forward a quasi-Fermi-level phase space (QFLPS) approach to model…