The mobility-degradation-based model for the drain-to-source or output resistance of a graphene field-effect-transistor is linearized here using a Taylor series approximation. This simplification is shown to be valid from magnitudes of the gate voltage not significantly higher than the Dirac voltage, and it enables the analytical determination of the transconductance parameter, the voltage related to residual charges, and a bias-independent series resistance of the GFET. Furthermore, a continuous representation of the device's static response is achieved when substituting the extracted parameters into the model, regardless the transfer characteristic symmetry with respect to the Dirac voltage.
@article{arxiv.2506.10592,
title = {A Taylor Series Approximation Model for Characterizing the Output Resistance of a GFET},
author = {Xiomara Ribero-Figueroa and Anibal Pacheco-Sanchez and Tzu-Jung Huang and David Jiménez and Ivan Puchades and Reydezel Torres-Torres},
journal= {arXiv preprint arXiv:2506.10592},
year = {2025}
}