Related papers: Theoretical model of a new type tunneling transist…
We investigate the minimal requirements that induce a nonreciprocal response to temperature differences in a mesoscopic electronic conductor. We identify two distinct mechanisms involved in electron-electron interactions, namely inelastic…
We report the on-wafer characterization of $S$-parameters and microwave noise temperature ($T_{50}$) of discrete metamorphic InGaAs high electron mobility transistors (mHEMTs) at 40 K and 300 K and over a range of drain-source voltages…
We develop a microscopic analysis of superconducting and dissipative currents in junctions between superconductors with d-wave symmetry of the order parameter. We study the proximity effect in such superconductors and show that for certain…
We show that in mesoscopic four-terminal thermoelectric devices with two electrodes (the source and the drain) and two heat baths, inelastic scattering processes can lead to unconventional thermoelectric transport. The source (or the drain)…
By measuring the current-voltage characteristics and the switching current distributions as a function of temperature, we have investigated the phase dynamics of Al tunnel ferromagnetic Josephson junctions (JJs), designed to fall in the…
We investigate low-temperature and low-voltage-bias charge transport in a superconducting Al single electron transistor in a dissipating environment, realized as on-chip high-ohmic Cr microstrips. In our samples with relatively large…
N-polar GaN/AlN resonant tunneling diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current-voltage characteristics reveal a negative differential…
The adsorption and diffusion of hydrogen atoms on Cu(001) are studied using first-principles calculations. By taking into account the contribution of zero-point energy (ZPE), the originally identical barriers are shown to be different for H…
The theory of dynamical Coulomb blockade is extended to tunneling elements driven by a time-dependent voltage. It is shown that for standard set-ups where an external voltage is applied to a tunnel junction via an impedance, time-dependent…
A general nonperturbative theory of the low-energy electron propagator is developed and used to calculate the single-particle density of states in a variety of systems. This method involves the decoupling of the electron-electron…
We have analyzed the tunneling transmission probability and electronic current density through resonant heterostructures in the presence of an external electromagnetic field. In this work, we compare two different models for a double…
The effect of thermal annealing on the properties of Al-AlOx-Al single electron tunneling transistors is reported. After treatment of the devices by annealing processes in forming gas atmosphere at different temperatures and for different…
We analyze the short-time behavior of the heat and charge currents through nanoscale conductors exposed to a temperature gradient. To this end, we employ Luttinger's thermomechanical potential to simulate a sudden change of temperature at…
The tunneling between two parallel two-dimensional electron gases has been investigated as a function of temperature $T$, carrier density $n$, and the applied perpendicular magnetic field $B$. In zero magnetic field the equilibrium resonant…
The notion of a spin field effect transistor, where transistor action is realized by manipulating the spin degree of freedom of charge carriers instead of the charge degree of freedom, has captivated researchers for at least three decades.…
The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue…
We report on theoretical investigations of carrier scattering asymmetry at ferromagnet-semiconductor junctions. By an analytical $2\times 2$ spin model, we show that, when Dresselhaus interactions is included in the conduction band of III-V…
In this paper, we discussed the current experiments on the tunneling effect of electromagnetic energy through narrow channels of $\epsilon$-near-zero(ENZ) medium in the microwave range. Using the finite element method, we carried out a full…
Interference represents one of the most striking manifestation of quantum physics in low-dimensional systems. Despite evidences of quantum interference in charge transport have been known for a long time, only recently signatures of…
We study the intra-planar tunneling between quantum Hall samples separated by a quasi one-dimensional barrier, induced through the interaction of edge degrees of freedom with the charge density waves of a Hall crystal defined in a parallel…