Related papers: Theoretical model of a new type tunneling transist…
The discovery that a gate electrode suppresses the supercurrent in purely metallic systems is missing a complete physical understanding of the mechanisms at play. We here study the origin of this reduction in a Superconductor-Normal…
We consider electronic transport through a suspended voltage-biased nanowire. By coupling the tunneling current to a transverse magnetic field, vibrational modes of the wire are excited which influences the current-voltage characteristics…
We find that, under appropriate conditions, electrons can pass a barrier etched across a two dimensional electron gas (2DEG) by field emission from the GaAs/AlGaAs heterojunction into a second, low-density 2DEG formed deep in the substrate.…
This paper extends the modern theory of tunneling transport to finite temperatures. The extension enables applications to molecular electronic devices connected to semiconducting leads. The paper presents an application of the theory to…
Transconductance is a central figure of merit in field-effect transistors, typically governed by charge accumulation and carrier mobility. In multilayer WSe$_2$ transistors, however, it is shown to carry a nonlinear transport signature of…
The transport properties of unsubstituted and amino-substituted butanethiol molecules sandwiched between Au electrodes are investigated by using first-principles approaches. New states are observed around the Fermi levels when -NH2 is…
We study the Coulomb drag effect in double layer electronic systems with local tunneling links. The possibility of tunneling between the layers leads to a pronounced exchange contribution to the transconductance, which is negative and…
This work explores the consequences of introducing a piezoelectric gate barrier in a normal field-effect transistor. Because of the positive feedback of strain and piezoelectric charge, internal charge amplification occurs in such an…
We considered a mesoscopic superconductor/normal metal (S/N) structure in which the N reservoirs are maintained at different temperatures. It is shown that in the absence of current between the N reservoirs a voltage difference $V_{T}$…
Charge transfer in a tunnel junction is studied under dc and ac voltage bias using quantum shot noise. Under dc voltage bias $V$, spectral density of noise measured within a very large bandwidth enables to deduce the current-current…
We consider quasiparticle charge and energy imbalances in a thin superconductor weakly coupled with two normal-metal electrodes via tunnel junctions at low temperatures. Charge and energy imbalances, which can be created by injecting…
Altermagnets can replace ferromagnets in tunnel junctions, yielding large tunneling magnetoresistance, ultrafast switching, and low-power functionality. While most studies explore the linear-response regime, interesting features emerge at…
The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor…
The tunnel ionization of an electron bounded by two delta potentials under the influence of a constant electric field is considered. The equations for the electron current density for two different initial states are obtained. The…
A comprehensive study of drain current dispersion effects in $\beta$-Ga$_2$O$_3$ FETs has been done using DC, pulsed and RF measurements. Both virtual gate effect in the gate-drain access region and interface traps under the gate are most…
We present transport measurements of electrons on the surface of liquid helium in a microchannel device in which a constriction may be formed by a split-gate electrode. The surface electron current passing through the microchannel first…
We study the electronic properties of dual-gated electron-hole bilayers in which the two layers are separated by a perfectly opaque tunnel barrier. Combining an electrostatic and thermodynamic analysis with mean-field theory estimates of…
A theoretical technique which allows to include contributions from non-orthogonality of the electron states in the leads connected to a tunneling junction is derived. The theory is applied to a single barrier tunneling structure and a…
Micrometer-sized Al/AlO$_{x}$/Y tunnel junctions were fabricated by the electron-beam lithography technique. The thin ($\approx$ 1.5--2 nm thickness) insulating AlO$_{x}$ layer was grown on top of the Al base electrode by O$_{2}$ glow…
The phenomenon of resonant tunneling transport through polar double-barrier heterostructures is systematically investigated using a combined experimental and theoretical approach. On the experimental side, GaN/AlN RTDs are grown by MBE.…