Related papers: Theoretical model of a new type tunneling transist…
Spin-polarized charge-currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer-torque (STT). Recently, by taking advantage of the spin dependent thermoelectric properties of magnetic materials, novel means of…
For a non-superconducting system, the electronic tunneling current through an insulating barrier is calculated, including interaction effects. The exact Hamiltonian of the full system is projected onto the subspaces of the "left" and…
The contact issue for two-dimensional (2D) materials-based field-effect transistors (FETs) has drawn enormous attention in recent years. Although ohmic behavior is achieved at room temperature, the drain current of 2DFETs shifts from ohmic…
The deviations of cryogenic collector current-voltage characteristics of SiGe heterojunction bipolar transistors (HBTs) from ideal drift-diffusion theory have been a topic of investigation for many years. Recent work indicates that direct…
The linear and nonlinear transport properties of the single-electron transistor at the degeneracy point are investigated for the case of weak single-mode tunnel junctions. Two opposing scenarios are considered, distinguished by whether or…
Using a block of three separated solid elements, a thermal source and drain together with a gate made of an insulator-metal transition material exchanging near-field thermal radiation, we introduce a nanoscale analog of a field-effect…
We calculate the tunnelling current through a Fabry-P\'{e}rot interferometer in the fractional quantum Hall regime. Within linear response theory (weak tunnelling but arbitrary source-drain voltage) we find a general expression for the…
The temperature dependence of the I-V characteristics of many single-electron tunneling devices enable thermometer operation of these systems. We investigate two normal conducting kinds of them, {\sl (a)} a single junction in a…
Electron transport through Si-C bound alkyl chains, sandwiched between n-Si and Hg, is characterized by two distinct types of barriers, each dominating in a different voltage range. At low voltage, current depends strongly on temperature…
We propose a Heterojunction Vertical Tunneling FET and show using self-consistent ballistic quantum transport simulations that it can provide very steep subthreshold swings and high ON current, thereby improving the scalability of Tunnel…
We consider the time-dependent electron transport through a quantum dot connected to multiple leads in the presence of the additional over-dot (bridge) tunnelling channels by using the evolution operator technique. Each terminal and quantum…
In this paper we show that through electrical characterization and detailed quantum simulations of the capacitance-voltage and current-voltage characteristics it is possible to extract a series of material parameters of alternative gate…
Low-dimensional semiconductors have been widely exploited in thermoelectric energy conversion for high efficiencies due to their suppressed lattice thermal conduction, sharply defined electronic density of states, and tunable…
Nanofluidic ionic transistors typically require gate voltages above 1 V and operate only at sub millimolar ionic strengths, limiting their biocompatible applications. We demonstrate ionic transistors consisting of single sub 10 nm nanopores…
The Fowler-Nordheim tunneling current formula has been widely used in the design of devices based on metal/insulator (metal/semiconductor) heterojunctions with triangle potential barriers, such as the flash memory. Here we adopt the model…
We analyze the noise properties of both electric charge and heat currents as well as their correlations in a quantum-dot based thermoelectric engine. The engine is a three-terminal conductor with crossed heat and charge flows where heat…
We propose a tunneling heterostructure by replacing one of the metal electrodes in a metal/ferroelectric/metal ferroelectric tunnel junction with a heavily doped semiconductor. In this metal/ferroelectric/semiconductor tunnel diode, both…
We study the transmission through single and double ferromagnetic barriers on the surface of a topological insulator. By adjusting the gate voltage and magnetization oreintation, the ferromagnetic barrier can be tuned into various…
In the present work, we have investigated the performances of L shaped Vertical broken bandgapheterostructureInSb InAsn-channel tunnel field effect transistors TFETs of 4 nm thin channel structures with the gate lengths of 20nm. We have…
Characteristic features of tunneling times for dissipative tunneling of a particle through a rectangular barrier are studied within a semiclassical model involving dissipation in the form of a velocity dependent frictional force. The…