Related papers: Current-driven writing process in antiferromagneti…
Antiferromagnets are promising candidates for ultrafast spintronic applications, leveraging current-induced spin-orbit torques. However, experimentally distinguishing between different switching mechanisms of the staggered magnetization…
The effects of current induced N\'eel spin-orbit torques on the antiferromagnetic domain structure of epitaxial Mn$_2$Au thin films were investigated by X-ray magnetic linear dichroism - photoemission electron microscopy (XMLD-PEEM). We…
Electrical manipulation of antiferromagnets with specific symmetries offers the prospect of creating novel, antiferromagnetic spintronic devices. Such devices aim to make use of the insensitivity to external magnetic fields and the…
We predict that a lateral electrical current in antiferromagnets can induce non-equilibrium N\'eel order fields, i.e. fields whose sign alternates between the spin sublattices, which can trigger ultra-fast spin-axis reorientation. Based on…
In antiferromagnetic spintronics, the read-out of the staggered magnetization or Neel vector is the key obstacle to harnessing the ultra-fast dynamics and stability of antiferromagnets for novel devices. Here, we demonstrate strong exchange…
Antiferromagnets are magnetically ordered materials which exhibit no net moment and thus are insensitive to magnetic fields. Antiferromagnetic spintronics aims to take advantage of this insensitivity for enhanced stability, while at the…
The absence of stray fields, their insensitivity to external magnetic fields, and ultrafast dynamics make antiferromagnets promising candidates for active elements in spintronic devices. Here, we demonstrate manipulation of the N\'{e}el…
Antiferromagnets have a number of favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields . Tetragonal CuMnAs is a testbed system in…
N\'eel spin-orbit torque allows a charge current pulse to efficiently manipulate the N\'eel vector in antiferromagnets, which offers a unique opportunity for ultrahigh density information storage with high speed. However, the reciprocal…
Antiferromagnets with zero net magnetic moment, strong anti-interference and ultrafast switching speed have potential competitiveness in high-density information storage. Body centered tetragonal antiferromagnet Mn2Au with opposite spin…
Understanding the electrical manipulation of antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequency. Focusing on collinear insulating antiferromagnetic NiO/Pt thin films as a…
Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the N\'eel vector of antiferromagnetic (AFM) materials, particularly to…
Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o…
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We…
In this work, we investigate the steady propagation of 180-degree domain walls (180DWs) of N\'{e}el vectors in thin antiferromagnetic strips under perpendicularly injected spin currents with various polarization orientations. Our results…
Efficient manipulation of the N\'eel vector in antiferromagnets can be induced by generation of spin orbit (SOT) or spin-transfer (STT) torques. Here we predict another possibility for antiferromagnetic domain switching by using a non-zero…
We report measurements demonstrating that when the Neel vector of the collinear antiferromagnet RuO2 is appropriately canted relative to the sample plane, the antiferromagnet generates a substantial out of plane damping-like torque. The…
Metallic antiferromagnets with broken inversion symmetry on the two sublattices, strong spin-orbit coupling and high N\'{e}el temperatures offer new opportunities for applications in spintronics. Especially Mn$_{2}$Au, with high N\'{e}el…
Efficient control of antiferromagnetic (AFM) domain switching in thin films is vital for advancing antiferromagnet-based memory devices. In this study, we directly observed the current-driven switching process of CoO AFM domains in the…
Spin current plays a central role in spintronics for driving exotic spin-dependent phenomena and high-performance device applications. Recently, a magnetic spin Hall effect has been discovered in spin-split antiferromagnets including…