Related papers: Monolithic Integration of Embedded III-V Lasers on…
The rapidly developing quantum communication technology requires deterministic quantum emitters that can generate single photons and entangled photon pairs in the third telecom window, in order to be compatible with existing optical fiber…
Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an…
Next-generation scalable quantum photonic technologies operating at the single photon level rely on bringing together optimized quantum building blocks with minimal optical coupling losses. Achieving this necessitates the heterogeneous…
Monolithic 3D integration has become a promising solution for future computing needs. The metal inter-layer via (MIV) forms interconnects between substrate layers in Monolithic 3D integration. Despite small size of MIV, the area overhead…
The fruitful association of quantum and integrated photonics holds the promise to produce, manipulate, and detect quantum states of light using compact and scalable systems. Integrating all the building-blocks necessary to produce…
III-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry of nanowires allows to integrate…
Integration of high quality semiconductor-superconductor devices into scalable and CMOS compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs…
A silicon light source at communication wavelength is the bottleneck for developing monolithically integrated silicon photonics. Doping silicon with erbium ions was believed to be one of the most promising approaches but suffers from the…
We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast…
Silicon carbide has emerged as a promising material platform for quantum photonics and nonlinear optics. These properties make the development of integrated photonic components in high-quality silicon carbide a critical aspect for the…
The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers integrated on silicon and emitting in the blue spectral range…
We present the fabrication process of bright $GaAs$ quantum dot (QD) photon sources by non-deterministic embedding into broadband monolithic $Al_{0.15}Ga_{0.85}As$ microlens arrays on gold-coated substrates. Arrays of cylindrical…
We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a…
Integrated photonic devices made of silicon nitride (SiN), which can be integrated with silicon-on-insulator and III-V platforms, are expected to drive the expansion of silicon photonics technology. However, the relatively low refractive…
Solid-state quantum emitters coupled to integrated photonic nanostructures are quintessential for exploring fundamental phenomena in cavity quantum electrodynamics and widely employed in photonic quantum technologies such as non-classical…
Silicon-nitride-on-insulator photonic circuits have seen tremendous advances in many applications, such as on-chip frequency combs, Lidar, telecommunications, and spectroscopy. So far, the best film quality has been achieved with low…
Scalable quantum photonic technologies require low-loss integration of many identical single-photon sources with photonic circuitry on a chip. Relatively complex quantum photonic circuits have already been demonstrated; however, sources…
Integrated photonics provides a powerful approach for developing compact, stable and scalable architectures for the generation, manipulation and detection of quantum states of light. To this end, several material platforms are being…
(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is…
Titanium:Sapphire (Ti:Sa) lasers have been essential for advancing fundamental research and technological applications. Ti:Sa lasers are unmatched in bandwidth and tuning range, yet their use is severely restricted due to their large size,…