Related papers: An Atomistic Modelling Framework for Valence Chang…
Combining scanning electron microscopy (SEM) and electron-beam-induced current (EBIC) imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like structure is preferentially…
In this work, we investigate the transport phenomena in compound semiconductor material based buried channel Quantum Well MOSFET with a view to developing a simple and effective model for the device current. Device simulation has been…
A quantum memristor is a resistive passive circuit element with memory engineered in a given quantum platform. It can be represented by a quantum system coupled to a dissipative environment, in which a system-bath coupling is mediated…
This paper introduces a novel simulation tool for analyzing and training neural network models tailored for compute-in-memory hardware. The tool leverages physics-based device models to enable the design of neural network models and their…
This paper presents a novel framework for designing support vector machines (SVMs), which does not impose restriction on the SVM kernel to be positive-definite and allows the user to define memory constraint in terms of fixed template…
The emergence of resistive non-volatile memories opens the way to highly energy-efficient computation near- or in-memory. However, this type of computation is not compatible with conventional ECC, and has to deal with device unreliability.…
This work analyzes transfer learning of the Variational Quantum Circuit (VQC). Our framework begins with a pretrained VQC configured in one domain and calculates the transition of 1-parameter unitary subgroups required for a new domain. A…
Memristors are prominent passive circuit elements with promising futures for energy-efficient in-memory processing and revolutionary neuromorphic computation. State-of-the-art memristors based on two-dimensional (2D) materials exhibit…
In 1971 the memristor was originally postulated as a new non-linear circuit element relating the time integrals of current and voltage. More recently researchers at HPLabs have linked the theoretical memristor concept to resistance…
We propose and computationally analyze a nonvolatile static random access memory (NV-SRAM) cell using magnetic tunnel junctions (MTJs) with magnetic-field-free current-induced magnetization switching (CIMS) architecture. A pair of MTJs…
Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…
Non-equilibrium molecular-scale dynamics, where fast electron transport couples with slow chemical state evolution, underpins the complex behaviors of molecular memristors, yet a general model linking these dynamics to neuromorphic…
In pursuit of neuromorphic (brain-inspired) devices, memristors (memory-resistors) have emerged as effective components for emulating neuronal circuitry. Here we formally define a class of Simple Volatile Memristors (SVMs) based on a simple…
We present simulations of the dynamic and temperature dependent behavior of Micro-Electro-Mechanical Systems (MEMS) by utilizing recently developed parallel codes which enable a coupling of length scales. The novel techniques used in this…
This thesis investigates the mechanically controlled break junctions, with a particular emphasis on elucidating the behaviour of molecular currents at room temperature. The core of this experimental investigation involves a detailed…
We propose a simple model of a nanoswitch as a memory resistor. The resistance of the nanoswitch is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the…
The new emerging non-volatile memory (NVM) devices known as memristors could be the promising candidate for future digital architecture, owing to their nanoscale size and its ability to integrate with the exciting CMOS technology. In this…
Resistive Random Access Memory (ReRAM) is a promising candidate for implementing Computing-in-Memory (CIM) architectures and neuromorphic circuits. ReRAM cells exhibit significant variability across different memristive devices and cycles,…
Reversible bipolar nano-switches that can be set and read electronically in a solid-state two-terminal device are very promising for applications. We have performed molecular-dynamics simulations that mimic systems with oxygen vacancies…
During the last decade, valence change memory (VCM) has been extensively studied due to its promising features, such as a high endurance and fast switching times. The information is stored in a high resistive state (logcial '0', HRS) and a…