We propose a simple model of a nanoswitch as a memory resistor. The resistance of the nanoswitch is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the presence of Joule's heat dissipation. In the case of a single potential minimum, we observe hysteresis of the resistance at finite applied currents and a negative differential resistance. For two (or more) minima the switching mechanism is non-volatile, meaning that the memristor can switch to a resistive state of choice and stay there. Moreover, the noise spectra of the switch exhibit 1/f2→1/f crossover, in agreement with recent experimental results.
@article{arxiv.1304.4501,
title = {Perfect memristor: non-volatility, switching and negative differential resistance},
author = {Sergey E. Savel'ev and Fabio Marchesoni and Alexander M. Bratkovsky},
journal= {arXiv preprint arXiv:1304.4501},
year = {2013}
}