Related papers: Defect Profiling of Oxide-Semiconductor Interfaces…
Using positive muons as local probes implanted at low energy enables gathering information about the material of interest with nanometer depth resolution (low energy muon spin rotation spectroscopy (LE-$\mu$SR). In this work, we leverage…
Using low-energy muons, we map the charge carrier concentration as a function of depth and electric field across the \SiOSi interface up to a depth of \SI{100}{\nano\meter} in Si-based MOS capacitors. The results show that the formation of…
The silicon/silicon dioxide (Si/SiO2) interface plays a crucial role in the performance, cost, and reliability of most modern microelectronic devices, from the basic transistor to flash memory, digital cameras, and solar cells. Today the…
We investigate the use of Low Energy Ion Scattering (LEIS) to characterize buried interfaces of ultra-thin films. LEIS spectra contain depth-resolved information in the so-called sub-surface signal. However, the exact correlation between…
With nearly complete spin polarization, the ferromagnetic semiconductor europium monoxide could enable next-generation spintronic devices by providing efficient ohmic spin injection into silicon. Spin injection is greatly affected by the…
Ferromagnetic semiconductor europium monoxide (EuO) is believed to be an effective spin injector when directly integrated with silicon. Injection through spin-selective ohmic contact requires superb structural quality of the interface…
A rough interface seems to be one of the possible reasons for low channel mobility (conductivity) in SiC MOSFETs. To evaluate the mobility by interface roughness, we drew a boundary line between amorphous insulator and crystalline 4H-SiC in…
Studying the electrical and structural properties of the interface of the gate oxide (SiO2) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for understanding and optimizing the performances of…
Recent studies in quantum computing have shown that quantum error correction with large numbers of physical qubits are limited by ionizing radiation from high-energy particles. Depending on the physical setup of the quantum processor, the…
The low energy muon spin rotation spectroscopy (LE-$\mu$SR) is primarily used to investigate thin films, surfaces, and interfaces of materials, which has matured at the Paul Scherrer Institute (PSI) and is routinely employed by users of the…
Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality. To date, the inherent chemical reactivity between EuO and Si has prevented…
We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at…
We report depth-resolved measurements of the Meissner screening profile in several surface-treated Nb samples using low-energy muon spin rotation (LE-$\mu$SR). In these experiments, implanted positive muons, whose stopping depths below Nb's…
Muons, as a bulk probe of materials, have been used to study the depth profile of charge carrier kinetics in Si wafers by scanning the muon implantation depth. The photoexcited muon spin spectroscopy technique can optically generate excess…
Point contact tunneling (PCT) and low energy muon spin rotation (LE-muSR) are used to probe, on the same samples, the surface superconducting properties of micrometer thick niobium films deposited onto copper substrates using different…
Ruthenium dioxide (RuO2) has recently emerged as a candidate altermagnet, yet its intrinsic magnetic ground state, particularly in thin films, remains debated. This study aims to clarify the nature and spatial extent of the magnetic order…
Dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices, such as the Si/SiO$_2$ MOS field effect transistor (MOSFET), possess trap states that can be visualized with electrically-detected spin resonance…
Silicon has long been synonymous with semiconductor technology. This unique role is due largely to the remarkable properties of the Si-SiO_2 interface, especially the (001)-oriented interface used in most devices. Although Si is crystalline…
The possibility to build a SiPM-readout muon detector (SiRO), using plastic scintillators with optical fibers as sensitive volume and readout by SiPM photo-diodes, is investigated. SiRO shall be used for tracking cosmic muons based on…
Surface damage caused by ionizing radiation in SiO$_2$ passivated silicon particle detectors consists mainly of the accumulation of a positively charged layer along with trapped-oxide-charge and interface traps inside the oxide and close to…