Related papers: Dynamic negative capacitance regime in GeTe Rashba…
The Rashba superconductor, in which spin-splitting bands become superconducting, is fascinating as a novel superconducting system in low dimensional systems. Here, we present the results of $\textit{in-situ}$ transport measurements on a…
Atomistic density functional theory (DFT) calculations of the capacitance between a metallic cylindric gate and a carbon nanotube (CNT) are reported. Results stressing the predominant effect of quantum capacitance in limiting or even…
We present results of transport properties measurement on a single crystal of V$_3$Si showing distinct signature of peak-effect in its vortex state. The field variation of the electrical resistance in the flux-line lattice prepared by…
Oxide heterostructures with polar films display special electronic properties, such as the electronic reconstruction at their internal interfaces with the formation of two-dimensional metallic states. Moreover, the electrical field from the…
We report on low-temperature photoconductivity (PC) in n-PbTe(Ga) epitaxial films prepared by the hot-wall technique on <111>-BaF_2 substrates. Variation of the substrate temperature allowed us to change the resistivity of the films from…
It is well known that conventional Field Effect Transistors (FET's) require a change in the channel potential of at least 60 mV at 300K to effect a change in the current by a factor of ten, and this minimum subthreshold slope S puts a lower…
Electrical conductivity with gate-sweep in a few layer MoS$_2$-on-SiO$_2$ field-effect-transistor shows an abrupt reduction in hysteresis when cooled. The hysteresis and time dependent conductivity of the MoS$_2$ channel are modeled using…
Negative capacitance (NC) in ferroelectrics, which stems from the imperfect screening of polarization, is considered a viable approach to lower voltage operation in the field-effect transistors (FETs) used in logic switches. In this paper,…
The negative capacitance (NC) stabilization of a ferroelectric (FE) material can potentially provide an alternative way to further reduce the power consumption in ultra-scaled devices and thus has been of great interest in technology and…
Current-voltage characteristics were measured in the mixed state of Y1Ba2Cu3O(7-delta) superconducting films in the regime where flux flow becomes unstable and the differential conductivity dj/dE becomes negative. Under conditions where its…
Hysteresis and memory effects in graphene field-effect transistors (GFETs) offer unique opportunities for neuromorphic computing, sensing, and memory applications, yet their physical origins remain debated due to competing volatile and…
In electronic devices where a two-dimensional electron gas (2DEG) comprises one or both sides of a plane capacitor, the resulting capacitance $C$ can be larger than the "geometric capacitance" $C_g$ determined by the physical separation $d$…
Injection-type ballistic rectifiers on Si/SiGe are studied with respect to the influence of gate voltage on the transfer resistance RT (output voltage divided by input current) for different positions of a local gate electrode. The…
Ferroelectric materials are characterized by degenerate ground states with multiple polarization directions. In a ferroelectric capacitor this should manifest as equally favourable up and down polarization states. However, this ideal…
Negative compressibility generated by many-body effects in 2D electronic systems can enhance gate capacitance. We observe capacitance enhancement in a newly emerged 2D layered material, atomically thin black phosphorus (BP). The…
We study the topological properties of Rashba spin-orbit coupling and exchange coupling induced pseudospin-$1$ system Dice lattice under the influence of a staggered electric potential and magnetization. The band structure and topological…
A comprehensive mapping of the spin polarization of the electronic bands in ferroelectric a-GeTe(111) films has been performed using a time-of-flight momentum microscope equipped with an imaging spin filter that enables a simultaneous…
Recent experiments on ferroelectric gating have introduced a novel functionality, i.e. nonvolatility, in graphene field effect transistors. A comprehensive understanding in the non-linear, hysteretic ferroelectric gating and an effective…
The unique capabilities of capacitance measurements in bilayer graphene enable probing of layer-specific properties that are normally out of reach in transport measurements. Furthermore, capacitance measurements in the top-gate and…
We study effects of a gate-controlled Rashba spin-orbit coupling to quantum spin-Hall edge states in HgTe quantum wells. A uniform Rashba coupling can be employed in tuning the spin orientation of the edge states while preserving the…